Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Rapid efficiency roll-off in high-quality green light-emitting diodes on freestanding GaN substrates

(2009) Y. Yang et al.   APPLIED PHYSICS LETTERS

Auger recombination rates in nitrides from first principles

(2009) Kris T. Delaney et al.   APPLIED PHYSICS LETTERS

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

(2009) Han-Youl Ryu et al.   APPLIED PHYSICS LETTERS

On the importance of radiative and Auger losses in GaN-based quantum wells

(2008) J. Hader et al.   APPLIED PHYSICS LETTERS

Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes

(2008) Jianzheng Hu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS