Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
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Title
Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta2O5−x/W device
Authors
Keywords
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Journal
Scientific Reports
Volume 7, Issue 1, Pages -
Publisher
Springer Nature
Online
2017-04-05
DOI
10.1038/s41598-017-00985-0
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Note: Only part of the references are listed.- Electrochemical-reaction-induced synaptic plasticity in MoOx-based solid state electrochemical cells
- (2017) Chuan-Sen Yang et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- High-Speed and Low-Energy Nitride Memristors
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- (2016) Zhongrui Wang et al. NATURE MATERIALS
- Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation
- (2016) Muxi Yu et al. Scientific Reports
- Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch
- (2015) Qi Wang et al. ADVANCED MATERIALS
- Synaptic Metaplasticity Realized in Oxide Memristive Devices
- (2015) Zheng-Hua Tan et al. ADVANCED MATERIALS
- Polarity Reversal in the Bipolar Switching of Anodic TiO2Film
- (2015) Xue-Bing Yin et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Frequency-dependent learning achieved using semiconducting polymer/electrolyte composite cells
- (2015) W. S. Dong et al. Nanoscale
- Training and operation of an integrated neuromorphic network based on metal-oxide memristors
- (2015) M. Prezioso et al. NATURE
- Dynamic moderation of an electric field using a SiO2switching layer in TaOx-based ReRAM
- (2015) Qi Wang et al. Physica Status Solidi-Rapid Research Letters
- The role of Schottky barrier in the resistive switching of SrTiO3: direct experimental evidence
- (2015) Xue-Bing Yin et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
- (2014) F. Pan et al. MATERIALS SCIENCE & ENGINEERING R-REPORTS
- Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions
- (2014) Evgeny Mikheev et al. Nature Communications
- Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface
- (2014) Amit Prakash et al. Nanoscale Research Letters
- HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture
- (2013) Shimeng Yu et al. ACS Nano
- Nonvolatile three-terminal operation based on oxygen vacancy drift in a Pt/Ta2O5−x/Pt, Pt structure
- (2013) Qi Wang et al. APPLIED PHYSICS LETTERS
- Investigation of the resistance switching in Au/SrTiO3:Nb heterojunctions
- (2013) Y. H. Wang et al. APPLIED PHYSICS LETTERS
- Transient behavior in Pt/Nb-doped SrTiO3 Schottky junctions
- (2013) Daisuke Kan et al. APPLIED PHYSICS LETTERS
- Nanoscale resistive switching devices: mechanisms and modeling
- (2013) Yuchao Yang et al. Nanoscale
- Synaptic plasticity and memory functions achieved in a WO3−x-based nanoionics device by using the principle of atomic switch operation
- (2013) Rui Yang et al. NANOTECHNOLOGY
- On-Demand Nanodevice with Electrical and Neuromorphic Multifunction Realized by Local Ion Migration
- (2012) Rui Yang et al. ACS Nano
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers
- (2011) Tsuyoshi Hasegawa et al. ADVANCED MATERIALS
- Metal/TiO2 interfaces for memristive switches
- (2011) J. Joshua Yang et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Sub-nanosecond switching of a tantalum oxide memristor
- (2011) Antonio C Torrezan et al. NANOTECHNOLOGY
- Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
- (2011) Takeo Ohno et al. NATURE MATERIALS
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Learning Abilities Achieved by a Single Solid-State Atomic Switch
- (2010) Tsuyoshi Hasegawa et al. ADVANCED MATERIALS
- Volatile/Nonvolatile Dual-Functional Atom Transistor
- (2010) Tsuyoshi Hasegawa et al. Applied Physics Express
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
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