Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch

Position detection and observation of a conducting filament hidden under a top electrode in a Ta2O5-based atomic switch

(2015) Alpana Nayak et al.   NANOTECHNOLOGY

Bipolar Electrochemical Mechanism for Mass Transfer in Nanoionic Resistive Memories

(2014) Xuezeng Tian et al.   ADVANCED MATERIALS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Formation process of conducting filament in planar organic resistive memory

(2013) S. Gao et al.   APPLIED PHYSICS LETTERS

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

(2012) Shuang Gao et al.   Journal of Physical Chemistry C

Electrochemical metallization cells—blending nanoionics into nanoelectronics?

(2012) Wei Lu et al.   MRS BULLETIN

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

(2011) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

Nanoionics Switching Devices: “Atomic Switches”

(2011) Tsuyoshi Hasegawa et al.   MRS BULLETIN

Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch

(2011) Tohru Tsuruoka et al.   NANOTECHNOLOGY

Sub-nanosecond switching of a tantalum oxide memristor

(2011) Antonio C Torrezan et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Volatile/Nonvolatile Dual-Functional Atom Transistor

(2010) Tsuyoshi Hasegawa et al.   Applied Physics Express

Forming and switching mechanisms of a cation-migration-based oxide resistive memory

(2010) T Tsuruoka et al.   NANOTECHNOLOGY

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS