Ag-NPs doping enhanced resistive switching performance and induced changes in magnetic properties of NiFe2O4 thin films

Enhanced resistive switching characteristics in Al2O3memory devices by embedded Ag nanoparticles

(2017) Leiwen Gao et al.   NANOTECHNOLOGY

Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant

(2016) M. Ismail et al.   ACS Applied Materials & Interfaces

Magnetization and Resistance Switchings Induced by Electric Field in Epitaxial Mn:ZnO/BiFeO3 Multiferroic Heterostructures at Room Temperature

(2016) Dong Li et al.   ACS Applied Materials & Interfaces

Electric field-induced coexistence of nonvolatile resistive and magnetization switching in Pt/NiO/Nb:SrTiO3 heterostructure

(2016) Meng Zhao et al.   APPLIED PHYSICS LETTERS

Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles

(2016) Da-Ting Wang et al.   IEEE ELECTRON DEVICE LETTERS

Resistance random access memory

(2016) Ting-Chang Chang et al.   Materials Today

Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials

(2016) Xiaoli Li et al.   Scientific Reports

Controllable Formation of Nanofilaments in Resistive Memories via Tip-Enhanced Electric Fields

(2016) Keun-Young Shin et al.   Advanced Electronic Materials

Nanoscale Magnetization Reversal Caused by Electric Field-Induced Ion Migration and Redistribution in Cobalt Ferrite Thin Films

(2015) Xinxin Chen et al.   ACS Nano

Study of resistive switching and magnetism modulation in the Pt/CoFe2O4/Nb:SrTiO3 heterostructures

(2015) Qiangwen Wang et al.   APPLIED PHYSICS LETTERS

Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

(2015) Kun Zhang et al.   Nanoscale

Co Nanoparticles Induced Resistive Switching and Magnetism for the Electrochemically Deposited Polypyrrole Composite Films

(2014) Zedong Xu et al.   ACS Applied Materials & Interfaces

Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method

(2014) Wei Hu et al.   ACS Applied Materials & Interfaces

Memristive behavior of Al2O3 film with bottom electrode surface modified by Ag nanoparticles

(2014) Shu-Chao Qin et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistive switching properties and physical mechanism of cobalt ferrite thin films

(2014) Wei Hu et al.   APPLIED PHYSICS LETTERS

Joint contributions of Ag ions and oxygen vacancies to conducting filament evolution of Ag/TaOx/Pt memory device

(2014) Yu-Lung Chung et al.   JOURNAL OF APPLIED PHYSICS

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Highly Improved Uniformity in the Resistive Switching Parameters of TiO2Thin Films by Inserting Ru Nanodots

(2013) Jung Ho Yoon et al.   ADVANCED MATERIALS

Trap state controlled bipolar resistive switching effect and electronic transport in LaAlO3/Nb:SrTiO3 heterostructures

(2013) X. L. Jiang et al.   APPLIED PHYSICS LETTERS

Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters

(2013) Z. Q. Wang et al.   Nanoscale

Surface modification of grains with silver nano-clusters: a new route to great enhancement of photoluminescence in Eu^3+-doped ferroelectric polycrystalline oxide thin films

(2013) Li Su et al.   OPTICS EXPRESS

Electric field induced simultaneous change of resistance and magnetization in an Ag/Ti/Fe3O4/Pt device

(2013) Shu-xia Ren et al.   Journal of Materials Chemistry C

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO

(2012) Guang Chen et al.   ADVANCED MATERIALS

High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure

(2012) Vishal Thakare et al.   APPLIED PHYSICS LETTERS

Three-state resistive switching in CoFe2O4/Pb(Zr0.52Ti0.48)O3/ZnO heterostructure

(2012) Ziwei Li et al.   APPLIED PHYSICS LETTERS

Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments

(2012) Wootae Lee et al.   APPLIED PHYSICS LETTERS

Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films

(2012) Myung Soo Lee et al.   APPLIED PHYSICS LETTERS

Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices

(2012) Wei Hu et al.   APPLIED PHYSICS LETTERS

Influence of oxygen vacancies on the electronic structure and magnetic properties of NiFe2O4 thin films

(2012) G. Hassnain Jaffari et al.   JOURNAL OF APPLIED PHYSICS

Opportunity of Spinel Ferrite Materials in Nonvolatile Memory Device Applications Based on Their Resistive Switching Performances

(2012) Wei Hu et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Nonvolatile Memory Device Using Gold Nanoparticles Covalently Bound to Reduced Graphene Oxide

(2011) Peng Cui et al.   ACS Nano

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(2011) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles

(2011) L Shi et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Self-Formed Exchange Bias of Switchable Conducting Filaments in NiO Resistive Random Access Memory Capacitors

(2010) Jong Yeog Son et al.   ACS Nano

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Ionic doping effect in ZrO2 resistive switching memory

(2010) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Role of vacancies in transport and magnetic properties of nickel ferrite thin films

(2010) Safia Anjum et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

(2009)   APPLIED PHYSICS LETTERS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today