Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters

Resistive Switching in Single Epitaxial ZnO Nanoislands

(2012) Jing Qi et al.   ACS Nano

Resistive switching characteristics of nickel silicide layer embedded HfO2 film

(2012) Debashis Panda et al.   APPLIED PHYSICS LETTERS

Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides

(2012) Y S Chen et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

(2011) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

(2011) Haowei Zhang et al.   APPLIED PHYSICS LETTERS

Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance

(2011) Z. Q. Wang et al.   IEEE ELECTRON DEVICE LETTERS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

(2010) Min-Chen Chen et al.   APPLIED PHYSICS LETTERS

Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

(2010) Myoung-Jae Lee et al.   IEEE ELECTRON DEVICE LETTERS

Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film

(2010) Z Q Wang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Predictability of reset switching voltages in unipolar resistance switching

(2009) S. B. Lee et al.   APPLIED PHYSICS LETTERS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications

(2009) Sungho Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Scaling behaviors of reset voltages and currents in unipolar resistance switching

(2008) S. B. Lee et al.   APPLIED PHYSICS LETTERS