Review
Nanoscience & Nanotechnology
Hui-Chuan Liu, Si-Ming Zeng, Rui Li, Yan-Ping Jiang, Qiu-Xiang Liu, Xin-Gui Tang
Summary: The study demonstrated bipolar resistive switching and ferroelectricities of Ni0.5Zn0.5Fe2O4 (NZFO) thin films using Au/NZFO/LNO/Si structure. It was found that annealing atmosphere influences the structure and properties of NZFO, with oxygen vacancy and strain stress playing a significant role. The saturation magnetization and remnant polarization values of the samples were affected by the annealing atmosphere, with improved resistive switching property observed in NZFO annealed in nitrogen atmosphere.
ADVANCED COMPOSITES AND HYBRID MATERIALS
(2021)
Article
Physics, Applied
Sudhir Regmi, Zhong Li, K. C. Shambhu, Rabin Mahat, Ankur Rastogi, Ranjan Datta, Arunava Gupta
Summary: Epitaxial thin films of cobalt ferrite have been successfully grown on isostructural substrates using pulsed laser deposition. The films on ZnGa2O4 substrates are defect-free and under slight compressive strain, while the films on MgGa2O4 substrates show strain relaxation and defect formation.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Ceramics
Ashis K. Manna, P. Dash, Dip Das, S. K. Srivastava, P. K. Sahoo, A. Kanjilal, D. Kanjilal, Shikha Varma
Summary: We present the photoabsorption response and resistive switching behavior of ion-implanted ZnO thin films. The role of oxygen vacancies in the evolution of these properties is studied using various techniques. The results suggest an improvement in the crystallinity of the films with ion fluence, and an enhancement in oxygen vacancy is responsible for higher photo response in the UV-Vis range. Engineering of bandgap also introduces enhanced absorption in visible regime. An asymmetric resistive switching behavior is observed in films implanted at the highest fluence, with a switching behavior from a high resistance state to a low resistance state under positive bias conditions and a rectifying nature under negative bias conditions. Oxygen vacancies play a crucial role in the modulation of photoabsorption response and resistive switching mechanism.
CERAMICS INTERNATIONAL
(2022)
Article
Materials Science, Multidisciplinary
Amitkumar R. Patil, Tukaram D. Dongale, Sunil S. Nirmale, Rajanish K. Kamat, Keshav Y. Rajpure
Summary: This study demonstrates the development and investigation of bipolar resistive switching characteristics of the Al/Bi2WO6/FTO thin-film memristive device. The optimized device shows maximum current and the highest memristive area, with the ability to switch in consecutive cycles and retain data up to a certain period of time without degradation. The device possesses double valued charge-flux property, indicating the presence of memristive properties.
MATERIALS TODAY COMMUNICATIONS
(2021)
Article
Engineering, Electrical & Electronic
Meng-Hung Tsai, Chia-Jung Shih, Che-Wei Chang, Yu-Tseng Chu, You-Shen Wu, Cheng-Liang Huang
Summary: In this work, we propose that the band gap of amorphous Nb2O5 thin films can be narrowed, and this concept is validated by fabricating amorphous Nb2O5 based resistive random-access memory devices. The effects of Mn dopants and temperature on the conduction mechanism of the Nb2O5-based devices are investigated, and it is demonstrated that oxygen vacancies dominate the conduction mechanism of Mn-doped Nb2O5-based devices. X-ray photoelectron spectroscopy analysis reveals that the addition of Mn promotes the oxidation of Nb, offering significant benefits for improving the performance of RRAM memory.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Physical
M. G. A. Ranieri, P. P. Ortega, H. Moreno, M. A. Ramirez, E. C. Aguiar, A. Z. Simoes
Summary: This study investigates the resistive switching behavior and magnetoelectric coupling in La0.5Pr0.5FeO3 thin films prepared by the polymeric precursor method. Results show significant values of dielectric constant with increasing temperature, indicating ferroelectric ordering. The introduction of praseodymium in La sites leads to slightly ferromagnetic behavior and the presence of resistive switching and magnetoelectric coupling phenomena in the thin films.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
F. L. Faita, L. B. Avila, J. P. B. Silva, M. H. Boratto, C. C. Pla Cid, C. F. O. Graeff, M. J. M. Gomes, C. K. Mueller, A. A. Pasa
Summary: A uniform and stable Prussian White layer was successfully deposited on Au/Cr/Si substrates by electrodeposition, exhibiting an interesting resistive switching effect with ionic conduction possibly attributed to potassium ions at the grain boundaries. The abnormal resistive switching behavior was stable after 500 cycles, and the high and low resistive states remained stable for up to 1000 seconds.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Materials Science, Multidisciplinary
Shiva Lamichhane, Savita Sharma, Monika Tomar, Arijit Chowdhuri
Summary: In this study, BFO thin film samples were deposited using different laser energy levels to investigate the impact of laser energy on the resistance switching property of the films. It was found that at a specific laser energy level, a high resistance ratio was achieved between the high resistance state and low resistance state, with a stable retention period and reproducible endurance cycles. Furthermore, the study of charge transport mechanism revealed different dominating mechanisms in different voltage regions, which is important for the further application of BFO thin films in memory devices.
MATERIALS CHEMISTRY AND PHYSICS
(2023)
Article
Polymer Science
Kai-Wen Lin, Ting-Yun Wang, Yu-Chi Chang
Summary: By investigating the influence of different top electrode materials on resistive switching behaviors, it was found that the Al/citrus/ITO device exhibited more stable performance and higher ON/OFF ratio due to the fast formation of an aluminum oxide layer. The redox reaction between the aluminum electrode and citrus film played a significant role in the resistive switching properties of these structures.
Article
Materials Science, Ceramics
Lun-Quan Wang, Wen-Hua Li, Xin-Gui Tang, Xiao-Bin Guo, Qiu-Xiang Liu, Yan-Ping Jiang, Zhen-Hua Tang
Summary: This study successfully fabricated PbZrO3 (PZO) films on a LaNiO3 (LNO)-buffered Si(100) substrate using a sol-gel spin-coating technique, and demonstrated excellent bipolar resistance switching (RS) behavior in the resulting Au/PZO/LNO/Si heterojunction device. The device showed a high/low resistance ratio of 10^2 at bias voltages of +0.2 and -0.2 V, with RS characteristics remaining stable after 100 consecutive cycles of testing. Weibull distribution analysis indicated a uniform and stable high/low-resistance state, and conduction mechanisms were identified as Ohmic conduction and Schottky emission, with the RS phenomenon attributed to modulation of a Schottky-like barrier due to oxygen vacancy migration in the PZO films.
CERAMICS INTERNATIONAL
(2021)
Article
Chemistry, Multidisciplinary
Dennis Zywitzki, Raoul Schaper, Engin Ciftyuerek, Jan-Lucas Wree, Dereje H. Taffa, Daniel M. Baier, Detlef Rogalla, Yujiao Li, Michael Meischein, Alfred Ludwig, Zheshen Li, Klaus Schierbaum, Michael Wark, Anjana Devi
Summary: Transition metal ferrites (such as CFO and NFO) have gained attention as potential materials for supercapacitors, with CVD processes offering advantages in producing high-quality, uniform, and dense ferrite films. Electrodes deposited on conducting substrates exhibit pseudocapacitive behavior, with high interfacial capacitances.
ADVANCED MATERIALS INTERFACES
(2021)
Article
Materials Science, Ceramics
Jun Li, Xin-Gui Tang, Qiu-Xiang Liu, Yan-Ping Jiang, Wen-Hua Li, Zhen-Xun Tang
Summary: The research found that the Sr2TiO4/SrTiO3 heterostructure thin film exhibits excellent resistive switching properties, as well as good performance in stability, high-pressure resistance, and fatigue resistance. Various characterization methods were used to analyze the heterostructure, and the interfacial conduction mechanism was explained.
CERAMICS INTERNATIONAL
(2021)
Article
Physics, Multidisciplinary
Mahmoud El-Araby, Moatasem Mostafa Khalefa, Ayan Mukherjee, M. A. Mohaseb, Ahmed A. Aboud
Summary: In this research, cobalt oxide thin films with pure and nickel doping were deposited using spray pyrolysis. Various characterization techniques, including XRD, EDX, XPS, SEM, and optical spectroscopy, were used to analyze the films. The results confirmed the successful doping of nickel and the formation of Co3O4 as the stable phase. The Ni-doped films showed decreased band gap values and exhibited excellent electrochemical properties for potential application in supercapacitor devices.
Article
Chemistry, Physical
Xiaoyi Lei, Xiaoya Zhu, Hao Wang, Yang Dai, Han Zhang, Chunxue Zhai, Shulong Wang, Junfeng Yan, Wu Zhao
Summary: This study investigates the resistive switching characteristics of Cu/MoS2/ITO RRAM and proposes conceptual models to explain the nonvolatile and volatile behaviors observed. The results suggest that the resistive switching is influenced by the formation and breaking of Cu conductive filaments and the trapping and de-trapping of electrons at the ITO/MoS2 interface.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Materials Science, Multidisciplinary
Tukaram D. Dongale, Sagar S. Khot, Akshay A. Patil, Siddhesh V. Wagh, Prashant B. Patil, Deepak P. Dubal, Tae Geun Kim
Summary: The solution-processable nickel ferrite (NFO) nanomaterial exhibits excellent non-volatile memory and aqueous battery properties, with high endurance and retention in non-volatile memory. NFO thin film electrode shows improved electrochemical performance in Na2SO4 electrolyte, with rapid Na+ transport and low resistance.
MATERIALS & DESIGN
(2021)
Article
Physics, Applied
Yuanyang Guo, Wei Hu, Changgeng Zhang, Yao Peng, Yongcai Guo
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2020)
Article
Chemistry, Multidisciplinary
Ben Yang, Yin She, Changgeng Zhang, Shuai Kang, Jin Zhou, Wei Hu
Article
Nanoscience & Nanotechnology
Fanju Zeng, Yuanyang Guo, Wei Hu, Yongqian Tan, Xiaomei Zhang, Julin Feng, Xiaosheng Tang
ACS APPLIED MATERIALS & INTERFACES
(2020)
Article
Chemistry, Physical
Fanju Zeng, Yongqian Tan, Wei Hu, Xiaosheng Tang, Zhongtao Luo, Qiang Huang, Yuanyang Guo, Xiaomei Zhang, Haifeng Yin, Julin Feng, Xusheng Zhao, Ben Yang
Summary: Lead-free Cs3Cu2I5 perovskite films were used to construct memory devices with the performance being systematically studied by adding different amounts of hydroiodic acid (HI). Adding an appropriate amount of HI improved the crystallinity and morphology of Cs3Cu2I5 films, leading to enhanced resistive switching performance. This study provides a scientific strategy for improving the resistive switching performance of iodine halide perovskite-based memories.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Physics, Applied
Liye Li, Binglin Liu, Julin Feng, Wei Hu, Hao Lin, Yanyi Huang, Daofu Wu, Fanju Zeng, Jiaer Zhou, Xiaosheng Tang
Summary: The study investigates the impact of embedding carbon quantum dots in polymethylmethacrylate on the resistive switching characteristics, with the optimal group showing superior stability and repeatability compared to PMMA without CQDs. Additionally, simulation modeling using COMSOL software demonstrates that the introduction of CQDs may have a positive effect on the orderly growth of conductive filaments.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Kaijin Kang, Wei Hu, Xiaosheng Tang
Summary: This Perspective provides a condensed overview of halide perovskite RRAMs, including materials, device performance, switching mechanism, and potential applications. The challenges of halide perovskite films, device fabrication, memory performance reliability, and understanding of switching mechanism are discussed, along with potential paths for future research.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Chemistry, Physical
Binglin Liu, Junan Lai, Daofu Wu, Liye Li, Kaijin Kang, Wei Hu, Xiaosheng Tang
Summary: In this study, a two-dimensional HAPbI4 perovskite with high stability was prepared and used to fabricate a resistive random access memory (RRAM) device with superior resistive switching performance, high on/off ratio, long retention time, and stability after prolonged exposure to air.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2022)
Article
Physics, Applied
Yanming Zhang, Ge Tang, Peng Feng, Kaijin Kang, Xiaosheng Tang, Mo Li, Wei Hu
Summary: Researchers fabricated Al/AlN/TiN crossbar arrays as memory devices, which exhibit excellent resistive switching properties and neutron radiation-resistant performance. The memory devices maintained remarkable resistive switching behaviors after irradiating with neutron radiation, showing outstanding potential for radiation-resistant electronics applications.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Physical
Kaijin Kang, Wen Niu, Yanming Zhang, Anlin Li, Xingze Zou, Wei Hu
Summary: Here, a stable and environmentally friendly halide perovskite-based resistive random access memory device is reported. The device features two bipolar resistive switching modes, counterclockwise and clockwise, with stable endurance and long retention performance. The interconversion of the switching behaviors can be achieved through suitable electrical stimulation, and the ionic migration in the (PMA)2CuBr4 perovskite layer is identified as the origin of the dual resistive switching characteristics.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Chemistry, Physical
Kaijin Kang, Wen Niu, Yanming Zhang, Anlin Li, Xingze Zou, Wei Hu
Summary: In this paper, we present an environmentally stable and friendly resistive random access memory device based on halide perovskite. The device exhibits two bipolar resistive switching modes and shows stable endurance and long retention performance. The counterclockwise and clockwise switching behaviors can be interconverted by applying suitable electrical stimulation. The origin of the dual resistive switching behaviors is verified through the fabrication of different memory devices.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Zhijian Zhong, Zhiguo Jiang, Jianning Huang, Fangliang Gao, Wei Hu, Yong Zhang, Xinman Chen
Summary: Researchers propose a method of using memristors for neuromorphic computing, which can achieve energy efficiency and simulate the functions of biological neurons. By introducing threshold switching with different resistive states, different learning and forgetting behaviors can be achieved, with flexible tunability and ultra-low power consumption.
Article
Physics, Applied
Julin Feng, Wei Hu, Fanju Zeng, Hao Lin, Liye Li, Ben Yang, Yao Peng, Daofu Wu, Benjun Huo, Xiaosheng Tang
APPLIED PHYSICS LETTERS
(2020)
Review
Materials Science, Multidisciplinary
Wei Hu, Ben Yang, Yanming Zhang, Yin She
JOURNAL OF MATERIALS CHEMISTRY C
(2020)
Article
Materials Science, Multidisciplinary
Qiuyu Xia, Wen Zeng, Fengzhen Ji, Xinman Chen, Yong Zhang, Faling Ling, Wei Hu, Liang Fang, Said Nasir Khisro, Miao Zhou
JOURNAL OF MATERIALS CHEMISTRY C
(2019)
Article
Materials Science, Multidisciplinary
Qiqi Lin, Shilei Hao, Wei Hu, Ming Wang, Zhigang Zang, Linna Zhu, Juan Du, Xiaosheng Tang
JOURNAL OF MATERIALS CHEMISTRY C
(2019)
