Joint contributions of Ag ions and oxygen vacancies to conducting filament evolution of Ag/TaOx/Pt memory device

Revelation on the Interrelated Mechanism of Polarity-Dependent and Multilevel Resistive Switching in TaOx-Based Memory Devices

(2013) Ying-Chuan Chen et al.   Journal of Physical Chemistry C

Comment onReal-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte- Based ReRAM

(2012) Ilia Valov et al.   ADVANCED MATERIALS

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

(2012) Qi Liu et al.   ADVANCED MATERIALS

Resistive Switching Behaviors of HfO$_{2}$ Thin Films by Sol–Gel Spin Coating for Nonvolatile Memory Applications

(2012) Ananthakumar Ramadoss et al.   Applied Physics Express

$I$–$V$ Characteristics of Antiparallel Resistive Switches Observed in a Single $\hbox{Cu/TaO}_{x}\hbox{/Pt}$ Cell

(2012) Tong Liu et al.   IEEE ELECTRON DEVICE LETTERS

Electrochemical metallization cells—blending nanoionics into nanoelectronics?

(2012) Wei Lu et al.   MRS BULLETIN

Metal oxide memories based on thermochemical and valence change mechanisms

(2012) J. Joshua Yang et al.   MRS BULLETIN

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Redox processes in silicon dioxide thin films using copper microelectrodes

(2011) S. Tappertzhofen et al.   APPLIED PHYSICS LETTERS

Temperature effects on the switching kinetics of a Cu–Ta2O5-based atomic switch

(2011) Tohru Tsuruoka et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Forming and switching mechanisms of a cation-migration-based oxide resistive memory

(2010) T Tsuruoka et al.   NANOTECHNOLOGY

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices

(2008) Kohei Fujiwara et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE