Migration of interfacial oxygen ions modulated resistive switching in oxide-based memory devices

Effect of Electrode Materials on AlN-Based Bipolar and Complementary Resistive Switching

(2013) Chao Chen et al.   ACS Applied Materials & Interfaces

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Revelation on the Interrelated Mechanism of Polarity-Dependent and Multilevel Resistive Switching in TaOx-Based Memory Devices

(2013) Ying-Chuan Chen et al.   Journal of Physical Chemistry C

Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

(2012) Xiaojian Zhu et al.   ADVANCED MATERIALS

Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO

(2012) Guang Chen et al.   ADVANCED MATERIALS

Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure

(2012) C. Chen et al.   APPLIED PHYSICS LETTERS

Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure

(2012) C. Chen et al.   JOURNAL OF APPLIED PHYSICS

Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

(2012) Shuang Gao et al.   Journal of Physical Chemistry C

A Multilevel Memory Based on Proton-Doped Polyazomethine with an Excellent Uniformity in Resistive Switching

(2012) Benlin Hu et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Organic resistive nonvolatile memory materials

(2012) Takhee Lee et al.   MRS BULLETIN

Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

(2012) Ilia Valov et al.   NATURE MATERIALS

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

(2012) Feng PAN et al.   Progress in Natural Science-Materials International

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices

(2011) Byungjin Cho et al.   ADVANCED FUNCTIONAL MATERIALS

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Metal/TiO2 interfaces for memristive switches

(2011) J. Joshua Yang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Direct Observation at Nanoscale of Resistance Switching in NiO Layers by Conductive-Atomic Force Microscopy

(2011) Damien Deleruyelle et al.   Applied Physics Express

Improved reliability of Au/Si3N4/Ti resistive switching memory cells due to a hydrogen postannealing treatment

(2011) Hee-Dong Kim et al.   JOURNAL OF APPLIED PHYSICS

Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure

(2011) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode

(2010) Qi Liu et al.   ACS Nano

Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

(2010) Hu Young Jeong et al.   ADVANCED FUNCTIONAL MATERIALS

Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching

(2010) J. Joshua Yang et al.   ADVANCED MATERIALS

Silicon Oxide: A Non-innocent Surface for Molecular Electronics and Nanoelectronics Studies

(2010) Jun Yao et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Resistance switching effect in Nb-doped SrTiO3 (100) bicrystal with (100) ∼45° twist boundary

(2009) Sakyo Hirose et al.   JOURNAL OF APPLIED PHYSICS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Al electrode dependent transition to bipolar resistive switching characteristics in pure TiO2 films

(2008) Young Ho Do et al.   JOURNAL OF APPLIED PHYSICS

Resistive Switching in Organic Memories with a Spin-Coated Metal Oxide Nanoparticle Layer

(2008) Frank Verbakel et al.   Journal of Physical Chemistry C