A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect

Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems

(2011) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM

(2010) W.C. Chien et al.   IEEE ELECTRON DEVICE LETTERS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

(2009)   APPLIED PHYSICS LETTERS

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

(2009) Bin Gao et al.   IEEE ELECTRON DEVICE LETTERS

Low-Power and Nanosecond Switching in Robust Hafnium Oxide Resistive Memory With a Thin Ti Cap

(2009) H.Y. Lee et al.   IEEE ELECTRON DEVICE LETTERS

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

(2008) Wan Shen et al.   APPLIED PHYSICS LETTERS

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

(2008) Nuo Xu et al.   APPLIED PHYSICS LETTERS

Direct observation of oxygen movement during resistance switching in NiO/Pt film

(2008) Chikako Yoshida et al.   APPLIED PHYSICS LETTERS

Direct observation of conducting filaments on resistive switching of NiO thin films

(2008) J. Y. Son et al.   APPLIED PHYSICS LETTERS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today