Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devices
Published 2017 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devices
Authors
Keywords
-
Journal
Nanoscale
Volume 9, Issue 44, Pages 17494-17504
Publisher
Royal Society of Chemistry (RSC)
Online
2017-11-03
DOI
10.1039/c7nr05847k
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure
- (2016) Tohru Tsuruoka et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
- (2016) Zhongrui Wang et al. NATURE MATERIALS
- Nanoscale Plasmon-Enhanced Spectroscopy in Memristive Switches
- (2016) Giuliana Di Martino et al. Small
- Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
- (2016) Seungho Cho et al. Nature Communications
- Physics of the Switching Kinetics in Resistive Memories
- (2015) Stephan Menzel et al. ADVANCED FUNCTIONAL MATERIALS
- Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures
- (2015) Tohru Tsuruoka et al. ADVANCED FUNCTIONAL MATERIALS
- Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations
- (2015) Stephan Menzel et al. Nanoscale
- Phase-Change and Redox-Based Resistive Switching Memories
- (2015) Dirk J. Wouters et al. PROCEEDINGS OF THE IEEE
- Nanobattery Effect in RRAMs—Implications on Device Stability and Endurance
- (2014) Stefan Tappertzhofen et al. IEEE ELECTRON DEVICE LETTERS
- In Situ STEM of Ag and Cu Conducting Bridge Formation through Al2O3 in Nanoscale Resistive Memory Devices
- (2014) William A. Hubbard et al. MICROSCOPY AND MICROANALYSIS
- Filament growth dynamics in solid electrolyte-based resistive memories revealed by in situ TEM
- (2014) Xuezeng Tian et al. Nano Research
- Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories
- (2013) Stefan Tappertzhofen et al. ACS Nano
- Logic Computation in Phase Change Materials by Threshold and Memory Switching
- (2013) M. Cassinerio et al. ADVANCED MATERIALS
- Cation-based resistance change memory
- (2013) Ilia Valov et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Nanoscale resistive switching devices: mechanisms and modeling
- (2013) Yuchao Yang et al. Nanoscale
- Nanobatteries in redox-based resistive switches require extension of memristor theory
- (2013) I. Valov et al. Nature Communications
- Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories
- (2013) Deok-Yong Cho et al. Scientific Reports
- Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory
- (2012) Deok-Yong Cho et al. ADVANCED MATERIALS
- Simulation of multilevel switching in electrochemical metallization memory cells
- (2012) Stephan Menzel et al. JOURNAL OF APPLIED PHYSICS
- Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide
- (2012) Stefan Tappertzhofen et al. Nanoscale
- Beyond von Neumann—logic operations in passive crossbar arrays alongside memory operations
- (2012) E Linn et al. NANOTECHNOLOGY
- Emerging memories: resistive switching mechanisms and current status
- (2012) Doo Seok Jeong et al. REPORTS ON PROGRESS IN PHYSICS
- Preparation and characterization of GeSx thin-films for resistive switching memories
- (2012) Jan van den Hurk et al. THIN SOLID FILMS
- Observation of conducting filament growth in nanoscale resistive memories
- (2012) Yuchao Yang et al. Nature Communications
- Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
- (2011) Tohru Tsuruoka et al. ADVANCED FUNCTIONAL MATERIALS
- Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
- (2011) Takeo Ohno et al. NATURE MATERIALS
- Thermochemical resistive switching: materials, mechanisms, and scaling projections
- (2011) Daniele Ielmini et al. PHASE TRANSITIONS
- Formation and Instability of Silver Nanofilament in Ag-Based Programmable Metallization Cells
- (2010) Chang-Po Hsiung et al. ACS Nano
- Field-Absorbed Water Induced Electrochemical Processes in Organic Thin Film Junctions
- (2010) Nikolaus Knorr et al. Journal of Physical Chemistry C
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- (2010) Julien Borghetti et al. NATURE
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories
- (2009) C. Schindler et al. APPLIED PHYSICS LETTERS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started