Nanoionic transport and electrochemical reactions in resistively switching silicon dioxide

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Redox processes in silicon dioxide thin films using copper microelectrodes

(2011) S. Tappertzhofen et al.   APPLIED PHYSICS LETTERS

From stochastic single atomic switch to nanoscale resistive memory device

(2011) Attila Geresdi et al.   Nanoscale

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Current Status of Nonvolatile Semiconductor Memory Technology

(2010) Yoshihisa Fujisaki   JAPANESE JOURNAL OF APPLIED PHYSICS

Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

(2010) Y. Bernard et al.   MICROELECTRONIC ENGINEERING

Exponential ionic drift: fast switching and low volatility of thin-film memristors

(2008) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Low current resistive switching in Cu–SiO2 cells

(2008) C. Schindler et al.   APPLIED PHYSICS LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE