Simulation of multilevel switching in electrochemical metallization memory cells

Intrinsic constrains on thermally-assisted memristive switching

(2011) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistance switching memories are memristors

(2011) Leon Chua   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

(2010) Y. Bernard et al.   MICROELECTRONIC ENGINEERING

Forming and switching mechanisms of a cation-migration-based oxide resistive memory

(2010) T Tsuruoka et al.   NANOTECHNOLOGY

The Atomic Switch

(2010) Masakazu Aono et al.   PROCEEDINGS OF THE IEEE

Power and Energy Perspectives of Nonvolatile Memory Technologies

(2010) Narbeh Derhacobian et al.   PROCEEDINGS OF THE IEEE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Electrode kinetics of Cu–SiO2-based resistive switching cells: Overcoming the voltage-time dilemma of electrochemical metallization memories

(2009) C. Schindler et al.   APPLIED PHYSICS LETTERS

Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$

(2008) Weihua Guan et al.   IEEE ELECTRON DEVICE LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE