Direct observation of Ag filament growth and unconventional SET-RESET operation in GeTe amorphous films
Published 2016 View Full Article
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Title
Direct observation of Ag filament growth and unconventional SET-RESET operation in GeTe amorphous films
Authors
Keywords
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Journal
AIP Advances
Volume 6, Issue 7, Pages 075003
Publisher
AIP Publishing
Online
2016-07-08
DOI
10.1063/1.4958633
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- Conductive-bridging random access memory: challenges and opportunity for 3D architecture
- (2015) Debanjan Jana et al. Nanoscale Research Letters
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- (2014) Xuezeng Tian et al. ADVANCED MATERIALS
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- (2014) Debayan Mahalanabis et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Phase Change Characteristics in GeTe–CuTe Pseudobinary Alloy Films
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- Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
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- On the SET/RESET current asymmetry in electrochemical metallization memory cells
- (2014) Stephan Menzel et al. Physica Status Solidi-Rapid Research Letters
- Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems
- (2014) Yi Li et al. Scientific Reports
- Atomistic origin of rapid crystallization of Ag-doped Ge-Sb-Te alloys: A joint experimental and theoretical study
- (2013) B. Prasai et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
- (2012) Stefano Larentis et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Crystallization process and thermal stability of Ge1Cu2Te3 amorphous thin films for use as phase change materials
- (2011) Y. Sutou et al. ACTA MATERIALIA
- In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory
- (2011) Sang-Jun Choi et al. ADVANCED MATERIALS
- Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers
- (2011) Tsuyoshi Hasegawa et al. ADVANCED MATERIALS
- Electrochemical metallization memories—fundamentals, applications, prospects
- (2011) Ilia Valov et al. NANOTECHNOLOGY
- Phase Change Behavior in Ag[sub 10]Ge[sub 15]Te[sub 75] and the Electrolytic Resistive Switching in Both Amorphous and Crystalline Ag[sub 10]Ge[sub 15]Te[sub 75] Films
- (2010) Hanni Xu et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Electrical Behavior of Phase-Change Memory Cells Based on GeTe
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- Complementary resistive switches for passive nanocrossbar memories
- (2010) Eike Linn et al. NATURE MATERIALS
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
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- Nanosecond switching in GeTe phase change memory cells
- (2009) G. Bruns et al. APPLIED PHYSICS LETTERS
- Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film
- (2009) Sang-Jun Choi et al. IEEE ELECTRON DEVICE LETTERS
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