Local order origin of thermal stability enhancement in amorphous Ag doping GeTe
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Title
Local order origin of thermal stability enhancement in amorphous Ag doping GeTe
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 106, Issue 3, Pages 031904
Publisher
AIP Publishing
Online
2015-01-22
DOI
10.1063/1.4906332
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- (2012) C. David Wright et al. ADVANCED FUNCTIONAL MATERIALS
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- Antimony alloys for phase-change memory with high thermal stability
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- (2008) J. Hegedüs et al. NATURE MATERIALS
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