Direct observation of Ag filament growth and unconventional SET-RESET operation in GeTe amorphous films

Filamentary Switching: Synaptic Plasticity through Device Volatility

(2015) Selina La Barbera et al.   ACS Nano

Local order origin of thermal stability enhancement in amorphous Ag doping GeTe

(2015) L. Xu et al.   APPLIED PHYSICS LETTERS

Effect of Ag photo-doping on structural, optical and phase change properties of GeTe chalcogenide films

(2015) Praveen Kumar et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories

(2015) E. Souchier et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Combinatorial Study of Ag–Te Thin Films and Their Application as Cation Supply Layer in CBRAM Cells

(2015) Wouter Devulder et al.   ACS Combinatorial Science

Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells

(2015) Fei Zhuge et al.   AIP Advances

Conductive-bridging random access memory: challenges and opportunity for 3D architecture

(2015) Debanjan Jana et al.   Nanoscale Research Letters

Bipolar Electrochemical Mechanism for Mass Transfer in Nanoionic Resistive Memories

(2014) Xuezeng Tian et al.   ADVANCED MATERIALS

Impedance Measurement and Characterization of Ag-Ge30Se70-Based Programmable Metallization Cells

(2014) Debayan Mahalanabis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Phase Change Characteristics in GeTe–CuTe Pseudobinary Alloy Films

(2014) Yuta Saito et al.   Journal of Physical Chemistry C

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

(2014) F. Pan et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

On the SET/RESET current asymmetry in electrochemical metallization memory cells

(2014) Stephan Menzel et al.   Physica Status Solidi-Rapid Research Letters

Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems

(2014) Yi Li et al.   Scientific Reports

Atomistic origin of rapid crystallization of Ag-doped Ge-Sb-Te alloys: A joint experimental and theoretical study

(2013) B. Prasai et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

(2012) Stefano Larentis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Crystallization process and thermal stability of Ge1Cu2Te3 amorphous thin films for use as phase change materials

(2011) Y. Sutou et al.   ACTA MATERIALIA

In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory

(2011) Sang-Jun Choi et al.   ADVANCED MATERIALS

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

(2011) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

Phase Change Behavior in Ag[sub 10]Ge[sub 15]Te[sub 75] and the Electrolytic Resistive Switching in Both Amorphous and Crystalline Ag[sub 10]Ge[sub 15]Te[sub 75] Films

(2010) Hanni Xu et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

(2010) Luca Perniola et al.   IEEE ELECTRON DEVICE LETTERS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Nanosecond switching in GeTe phase change memory cells

(2009) G. Bruns et al.   APPLIED PHYSICS LETTERS

Improvement of CBRAM Resistance Window by Scaling Down Electrode Size in Pure-GeTe Film

(2009) Sang-Jun Choi et al.   IEEE ELECTRON DEVICE LETTERS