On the SET/RESET current asymmetry in electrochemical metallization memory cells

Physics of the Voltage Constant in Multilevel Switching of Conductive Bridge Resistive Memory

(2013) Tong Liu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Cation-based resistance change memory

(2013) Ilia Valov et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells

(2013) Stephan Menzel et al.   Nanoscale

Switching kinetics of electrochemical metallization memory cells

(2013) Stephan Menzel et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Simulation of multilevel switching in electrochemical metallization memory cells

(2012) Stephan Menzel et al.   JOURNAL OF APPLIED PHYSICS

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

(2011) Tsuyoshi Hasegawa et al.   ADVANCED MATERIALS

Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

(2010) Y. Bernard et al.   MICROELECTRONIC ENGINEERING