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Title
Crossbar Nanoscale HfO2-Based Electronic Synapses
Authors
Keywords
Memristor, Crossbar, Electronic synapse, STDP, Resistive switching, HfO<sub>2</sub>, 85.50.-n, 81.07.-b, 84.35.+i
Journal
Nanoscale Research Letters
Volume 11, Issue 1, Pages -
Publisher
Springer Nature
Online
2016-03-19
DOI
10.1186/s11671-016-1360-6
References
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Related references
Note: Only part of the references are listed.- Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
- (2015) Umesh Chand et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices
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- (2015) S. Privitera et al. SOLID-STATE ELECTRONICS
- Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations
- (2014) L. Zhao et al. Nanoscale
- Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems
- (2014) Yi Li et al. Scientific Reports
- A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation
- (2013) Shimeng Yu et al. ADVANCED MATERIALS
- Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor
- (2013) S. G. Hu et al. APPLIED PHYSICS LETTERS
- Synaptic electronics: materials, devices and applications
- (2013) Duygu Kuzum et al. NANOTECHNOLOGY
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- (2013) Shibing Long et al. Scientific Reports
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- (2013) T. Serrano-Gotarredona et al. Frontiers in Neuroscience
- Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories
- (2012) F. De Stefano et al. APPLIED PHYSICS LETTERS
- On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology
- (2012) Ximeng Guan et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model
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- (2011) Shimeng Yu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A study of the leakage current in TiN/HfO2/TiN capacitors
- (2011) S. Cimino et al. MICROELECTRONIC ENGINEERING
- A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications
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- A hybrid nanomemristor/transistor logic circuit capable of self-programming
- (2009) Julien Borghetti et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
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