标题
Crossbar Nanoscale HfO2-Based Electronic Synapses
作者
关键词
Memristor, Crossbar, Electronic synapse, STDP, Resistive switching, HfO<sub>2</sub>, 85.50.-n, 81.07.-b, 84.35.+i
出版物
Nanoscale Research Letters
Volume 11, Issue 1, Pages -
出版商
Springer Nature
发表日期
2016-03-19
DOI
10.1186/s11671-016-1360-6
参考文献
相关参考文献
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