Atom probe tomography of nanoscale electronic materials

Characterization of 3D Dopant Distribution in State of the Art FinFET Structures

(2016) M.S. Hatzistergos et al.   MICROSCOPY AND MICROANALYSIS

Towards Atom Probe Tomography of Hybrid Organic-Inorganic Nanoparticles

(2016) L.M. Gordon et al.   MICROSCOPY AND MICROANALYSIS

Revealing the Distribution of the Atoms within Individual Bimetallic Catalyst Nanoparticles

(2014) Peter Felfer et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Atom-probe analyses of nanodiamonds from Allende

(2014) Philipp R. Heck et al.   METEORITICS & PLANETARY SCIENCE

Advantage of Plasma Doping for Source/Drain Extension in Bulk Fin Field Effect Transistor

(2013) Takashi Izumida et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Pt redistribution in N-MOS transistors during Ni salicide process

(2013) F. Panciera et al.   MICROELECTRONIC ENGINEERING

Three-dimensional doping and diffusion in nano scaled devices as studied by atom probe tomography

(2013) Ajay Kumar Kambham et al.   NANOTECHNOLOGY

Colossal injection of catalyst atoms into silicon nanowires

(2013) Oussama Moutanabbir et al.   NATURE

3D site specific sample preparation and analysis of 3D devices (FinFETs) by atom probe tomography

(2013) Ajay Kumar Kambham et al.   ULTRAMICROSCOPY

Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography

(2012) H. Takamizawa et al.   APPLIED PHYSICS LETTERS

Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography

(2012) H. Takamizawa et al.   APPLIED PHYSICS LETTERS

Identification of an Intrinsic Source of Doping Inhomogeneity in Vapor–Liquid–Solid-Grown Nanowires

(2012) Justin G. Connell et al.   NANO LETTERS

Three-Dimensional Elemental Analysis of Commercial 45 nm Node Device with High-$k$/Metal Gate Stack by Atom Probe Tomography

(2011) Koji Inoue et al.   Applied Physics Express

Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging

(2011) H. Takamizawa et al.   APPLIED PHYSICS LETTERS

Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor

(2011) F. Panciera et al.   APPLIED PHYSICS LETTERS

Lanthanum diffusion in the TiN/LaOx/HfSiO/SiO2/Si stack

(2011) E. Martinez et al.   MICROELECTRONIC ENGINEERING

Atom-probe for FinFET dopant characterization

(2011) A.K. Kambham et al.   ULTRAMICROSCOPY

Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si

(2010) Dominique Mangelinck et al.   SCRIPTA MATERIALIA

Investigation of the analysis parameters and background subtraction for high-k materials with atom probe tomography

(2010) S. Mutas et al.   ULTRAMICROSCOPY

Atom probe analysis of a 3D finFET with high-k metal gate

(2010) M. Gilbert et al.   ULTRAMICROSCOPY

Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe

(2009) K. Inoue et al.   APPLIED PHYSICS LETTERS

Atomic Layer Deposition: An Overview

(2009) Steven M. George   CHEMICAL REVIEWS

Direct measurement of dopant distribution in an individual vapour–liquid–solid nanowire

(2009) Daniel E. Perea et al.   Nature Nanotechnology

Dopant distributions in n-MOSFET structure observed by atom probe tomography

(2009) K. Inoue et al.   ULTRAMICROSCOPY