Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography
Published 2012 View Full Article
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Title
Dopant characterization in self-regulatory plasma doped fin field-effect transistors by atom probe tomography
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 100, Issue 9, Pages 093502
Publisher
AIP Publishing
Online
2012-03-01
DOI
10.1063/1.3690864
References
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Note: Only part of the references are listed.- Conformal doping mechanism for fin field effect transistors by self-regulatory plasma doping with AsH3 plasma diluted with He
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- (2011) Takashi Izumida et al. JAPANESE JOURNAL OF APPLIED PHYSICS
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- Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements
- (2008) Kazuo Tsutsui et al. JOURNAL OF APPLIED PHYSICS
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