Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe

Title
Dopant distribution in gate electrode of n- and p-type metal-oxide-semiconductor field effect transistor by laser-assisted atom probe
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 4, Pages 043502
Publisher
AIP Publishing
Online
2009-07-28
DOI
10.1063/1.3186788

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