Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs
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Title
Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 12, Pages 6650-6655
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2022-11-11
DOI
10.1109/ted.2022.3218612
References
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Related references
Note: Only part of the references are listed.- Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology
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- (2021) Daniel Shoemaker et al. IEEE Transactions on Components Packaging and Manufacturing Technology
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- (2021) Mohamadali Malakoutian et al. ACS Applied Materials & Interfaces
- High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz
- (2020) Pawana Shrestha et al. IEEE ELECTRON DEVICE LETTERS
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- (2020) Brian Romanczyk et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current
- (2020) Wenjian Liu et al. IEEE ELECTRON DEVICE LETTERS
- Simulation Investigation of Laterally Downscaled N-Polar GaN HEMTs
- (2019) Wanjiao Chen et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$
- (2018) Xun Zheng et al. IEEE ELECTRON DEVICE LETTERS
- N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
- (2018) Onur S. Koksaldi et al. IEEE ELECTRON DEVICE LETTERS
- Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
- (2018) Brian Romanczyk et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz
- (2017) Steven Wienecke et al. IEEE ELECTRON DEVICE LETTERS
- Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties
- (2016) Julian Anaya et al. ACTA MATERIALIA
- Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz
- (2016) B. Romanczyk et al. ELECTRONICS LETTERS
- N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage
- (2016) Xun Zheng et al. IEEE ELECTRON DEVICE LETTERS
- Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process
- (2015) Robert C. Fitch et al. IEEE ELECTRON DEVICE LETTERS
- Microstructure and properties of porous silicon nitride ceramics prepared by gel-casting and gas pressure sintering
- (2012) Chunrong Zou et al. MATERIALS & DESIGN
- Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
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- GaN-Based RF Power Devices and Amplifiers
- (2008) U.K. Mishra et al. PROCEEDINGS OF THE IEEE
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