Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs

Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology

(2021) Mohamadali Malakoutian et al.   CRYSTAL GROWTH & DESIGN

Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE

(2021) Brian Romanczyk et al.   APPLIED PHYSICS LETTERS

6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates

(2021) Wenjian Liu et al.   IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS

Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers

(2021) Daniel Shoemaker et al.   IEEE Transactions on Components Packaging and Manufacturing Technology

Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling

(2021) Mohamadali Malakoutian et al.   ACS Applied Materials & Interfaces

High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz

(2020) Pawana Shrestha et al.   IEEE ELECTRON DEVICE LETTERS

Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs

(2020) Brian Romanczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current

(2020) Wenjian Liu et al.   IEEE ELECTRON DEVICE LETTERS

Simulation Investigation of Laterally Downscaled N-Polar GaN HEMTs

(2019) Wanjiao Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$

(2018) Xun Zheng et al.   IEEE ELECTRON DEVICE LETTERS

N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance

(2018) Onur S. Koksaldi et al.   IEEE ELECTRON DEVICE LETTERS

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

(2018) Brian Romanczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz

(2017) Steven Wienecke et al.   IEEE ELECTRON DEVICE LETTERS

Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties

(2016) Julian Anaya et al.   ACTA MATERIALIA

Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz

(2016) B. Romanczyk et al.   ELECTRONICS LETTERS

N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage

(2016) Xun Zheng et al.   IEEE ELECTRON DEVICE LETTERS

Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process

(2015) Robert C. Fitch et al.   IEEE ELECTRON DEVICE LETTERS

Microstructure and properties of porous silicon nitride ceramics prepared by gel-casting and gas pressure sintering

(2012) Chunrong Zou et al.   MATERIALS & DESIGN

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

(2010) M. Fagerlind et al.   JOURNAL OF APPLIED PHYSICS

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE