N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance

Published 2018 View Full Article

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Title
N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 39, Issue 7, Pages 1014-1017
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2018-05-16
DOI
10.1109/led.2018.2834939

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