High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N

From Fully Strained to Relaxed: Epitaxial Ferroelectric Al 1‐ x Sc x N for III‐N Technology

(2022) Georg Schönweger et al.   ADVANCED FUNCTIONAL MATERIALS

High-Temperature Acoustic and Electric Characterization of Ferroelectric Al $_0.7$ Sc $_0.3$ N Films

(2022) Jialin Wang et al.   JOURNAL OF MICROELECTROMECHANICAL SYSTEMS

Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering

(2021) Sung-Lin Tsai et al.   APPLIED PHYSICS LETTERS

Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon

(2021) Jaidah Mohan et al.   APPLIED PHYSICS LETTERS

Next generation ferroelectric materials for semiconductor process integration and their applications

(2021) T. Mikolajick et al.   JOURNAL OF APPLIED PHYSICS

Reduced coercive field in epitaxial thin film of ferroelectric wurtzite Al0.7Sc0.3N

(2021) Keisuke Yazawa et al.   APPLIED PHYSICS LETTERS

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

(2021) Xiwen Liu et al.   NANO LETTERS

Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al 0.6 Sc 0.4 N Films Using In Situ Optical Emission Spectrometry

(2021) Daniel Drury et al.   Physica Status Solidi-Rapid Research Letters

Ferroelectricity in boron-substituted aluminum nitride thin films

(2021) John Hayden et al.   Physical Review Materials

Thickness scaling of (Al0.8Sc0.2)N films with remanent polarization beyond 100 μC cm−2 around 10 nm in thickness

(2021) Ryoichi Mizutani et al.   Applied Physics Express

On the exceptional temperature stability of ferroelectric Al1-xScxN thin films

(2021) Md. Redwanul Islam et al.   APPLIED PHYSICS LETTERS

Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films

(2021) Wanlin Zhu et al.   APPLIED PHYSICS LETTERS

A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: Pyroelectricity and Reliability

(2020) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films

(2020) Shinnosuke Yasuoka et al.   JOURNAL OF APPLIED PHYSICS

AlScN: A III-V semiconductor based ferroelectric

(2019) Simon Fichtner et al.   JOURNAL OF APPLIED PHYSICS

MEM-FLASH non-volatile memory device for high-temperature multibit data storage

(2019) Pushpapraj Singh et al.   APPLIED PHYSICS LETTERS

Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review

(2016) Cong Ye et al.   JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

(2016) Hiroshi Suga et al.   Scientific Reports

Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

(2016) Philip G. Neudeck et al.   AIP Advances

Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications

(2012) Stefan Mueller et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Design Consideration of Magnetic Tunnel Junctions for Reliable High-Temperature Operation of STT-MRAM

(2010) Kangho Lee et al.   IEEE TRANSACTIONS ON MAGNETICS

Phase Change Memory

(2010) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

High-temperature poling of ferroelectrics

(2008) Alain B. Kounga et al.   JOURNAL OF APPLIED PHYSICS