4.5 Article

Thickness scaling of (Al0.8Sc0.2)N films with remanent polarization beyond 100 μC cm-2 around 10 nm in thickness

Journal

APPLIED PHYSICS EXPRESS
Volume 14, Issue 10, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.35848/1882-0786/ac2261

Keywords

size effect; remanent polarization; coercive field; thickness dependence

Funding

  1. project Element Strategy Initiative to Form a Core Research Center of MEXT [JPMXP0112101001]
  2. Japan Society for the Promotion of Science (JSPS) KAKENHI [21H01617]
  3. JST, PRESTO [JPMJPR20B3]
  4. Grants-in-Aid for Scientific Research [21H01617] Funding Source: KAKEN

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The (Al0.8Sc0.2)N films exhibit large remanent polarization values above 100μCcm(-2) at high temperatures, making them suitable for nonvolatile memory applications requiring high density and low voltage operation.
The temperature dependence of ferroelectric properties was investigated for (Al0.8Sc0.2)N films 9-130 nm thick prepared on (111)Pt/TiO x /SiO2/Si substrates. The coercive fields (E (c)) of these films decreased with increasing measurement temperature up to 523 K, irrespective of film thickness, thus realizing polarization switching because the applicable maximum electric field is beyond E (c). As a resultant, remanent polarization (P (r)) above 100 mu C cm(-2) was ascertained for 9 nm thick films at 373 and 423 K, which is more than 5 times larger than those of HfO2-based films of the same thickness. The P (r) value was almost independent of film thickness when an electric field is applied for switching. In addition, E (c) showed a smaller thickness dependence than conventional ferroelectrics, including Pb(Zr,Ti)O-3. The large P (r) value beyond 100 mu C cm(-2) for around 10 nm thick films with small degradation against film thickness, as well as the diminished increase in E (c) with decreasing film thickness. This showed that (Al0.8Sc0.2)N film is a promising candidate for nonvolatile memory applications requiring high-density and low-voltage operation, including capacitor-type memories and ferroelectric tunnel junction-type memories that consist of metal-ferroelectric-metal structure.

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