Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy

Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures

(2021) Mohammad Abdul Alim et al.   Electronics

Micro-LED as a Promising Candidate for High-Speed Visible Light Communication

(2020) Konthoujam James Singh et al.   Applied Sciences-Basel

Plastic Relaxation of Stressed Semipolar AlN($$10\bar {1}1$$) Layer Synthesized on a Nanopatterned Si(100) Substrate

(2020) V. N. Bessolov et al.   TECHNICAL PHYSICS

Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications

(2020) V. Aggarwal et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Photodetection Properties of Nonpolar a‐Plane GaN Grown by Three Approaches Using Plasma‐Assisted Molecular Beam Epitaxy

(2019) Rohit Kumar Pant et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Anisotropy of thermal expansion of 3Y-TZP, α-Al 2 O 3 and composites from 3Y-TZP/α-Al 2 O 3 system

(2018) Grzegorz Grabowski et al.   Archives of Civil and Mechanical Engineering

Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

(2017) V. Bessolov et al.   JOURNAL OF CRYSTAL GROWTH

Green light emitting diode grown on thick strain-reduced GaN template

(2015) Jiankun Yang et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Luminescence associated with stacking faults in GaN

(2014) Jonas Lähnemann et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Comparison of the microstructural characterizations of GaN layers grown on Si (111) and on sapphire

(2013) Huiyoun Shin et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates

(2012) P. Vennéguès et al.   JOURNAL OF APPLIED PHYSICS

Improved crystalline quality nonpolar a-GaN films grown by hydride vapor phase epitaxy

(2008) A. A. Donskov et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Growth of single-crystalline GaN layers in a horizontal reactor by chloride epitaxy

(2008) S. A. Smirnov et al.   TECHNICAL PHYSICS