Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications

The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance

(2020) Hayatun Najihah Hussin et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Field-emission and photo-detection characteristics of laser molecular beam epitaxy grown homoepitaxial GaN nanowall networks

(2019) Prashant Tyagi et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN

(2018) Rohit Pant et al.   ACS Applied Materials & Interfaces

Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors

(2018) Ch. Ramesh et al.   JOURNAL OF ALLOYS AND COMPOUNDS

High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN

(2017) Lei Liu et al.   Nanoscale

GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates

(2017) Wenjie Mou et al.   SOLID-STATE ELECTRONICS

Influence of laser repetition rate on the structural and optical properties of GaN layers grown on sapphire (0001) by laser molecular beam epitaxy

(2016) S. S. Kushvaha et al.   CRYSTENGCOMM

Nanostructuring GaN thin film for enhanced light emission and extraction

(2016) Sanjay Kumar Nayak et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Enhancing Responsivity of Porous GaN Metal-Semiconductor-Metal Ultraviolet Photodiodes by Using Photoelectrochemical Etching

(2016) K. Al-Heuseen et al.   ACTA PHYSICA POLONICA A

Growth and characterization of large-scale Ti:sapphire crystal using heat exchange method for ultra-fast ultra-high-power lasers

(2015) Kaijie Ning et al.   CRYSTENGCOMM

Recent advances in ultraviolet photodetectors

(2015) Z. Alaie et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN

(2014) Xiaotong Liu et al.   CRYSTENGCOMM

Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

(2014) Shruti Mukundan et al.   JOURNAL OF APPLIED PHYSICS

Microstructure of porous gallium nitride nanowall networks

(2013) David Poppitz et al.   ACTA MATERIALIA

Low-Dimensional Nanostructure Ultraviolet Photodetectors

(2013) Lin Peng et al.   ADVANCED MATERIALS

High Quantum Efficiency GaN-Based p-i-n Ultraviolet Photodetectors Prepared on Patterned Sapphire Substrates

(2013) Guosheng Wang et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy

(2012) Aihua Zhong et al.   Nanoscale Research Letters

Hole concentration test of p-type GaN by analyzing the spectral response of p–n+ structure GaN ultraviolet photodetector

(2009) D.G. Zhao et al.   JOURNAL OF ALLOYS AND COMPOUNDS

X-ray diffraction of III-nitrides

(2009) M A Moram et al.   REPORTS ON PROGRESS IN PHYSICS