On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates

Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates

(2011) Julita Smalc-Koziorowska et al.   APPLIED PHYSICS LETTERS

Nonpolar and Semipolar Group III Nitride-Based Materials

(2011) J. S. Speck et al.   MRS BULLETIN

Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN

(2010) Feng Wu et al.   APPLIED PHYSICS LETTERS

Influence of Stacking Sequences and Lattice Parameter Differences on the Microstructure of Nonpolar AlN Films Grown on (11\bar20) 6H-SiC by Plasma-Assisted Molecular Beam Epitaxy

(2010) Philippe Vennegues et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The defect character of GaN growth on r-plane sapphire

(2010) J. Smalc-Koziorowska et al.   JOURNAL OF APPLIED PHYSICS

Study of the epitaxial relationships between III-nitrides and M-plane sapphire

(2010) Philippe Vennéguès et al.   JOURNAL OF APPLIED PHYSICS

Investigation of initial growth and very thin () ZnO films by cross-sectional and plan-view transmission electron microscopy

(2009) Jae Wook Lee et al.   APPLIED SURFACE SCIENCE

M-Plane GaN Grown onm-Plane Sapphire by Hydride Vapor Phase Epitaxy

(2009) Tiankai Zhu et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method

(2009) C. F. Johnston et al.   JOURNAL OF APPLIED PHYSICS

On the origin of threading dislocations in GaN films

(2009) M. A. Moram et al.   JOURNAL OF APPLIED PHYSICS

Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems

(2009) G. Saint-Girons et al.   PHYSICAL REVIEW B

Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy

(2008) P. Vennéguès et al.   JOURNAL OF APPLIED PHYSICS

Interface structure and anisotropic strain relaxation of nonpolar wurtzite (1120) and (1010) orientations: ZnO epilayers grown on sapphire

(2008) J.-M. Chauveau et al.   JOURNAL OF APPLIED PHYSICS

Characterization of microstructure and defects in epitaxial ZnO films on Al2O3 substrates by transmission electron microscopy

(2008) Jae Wook Lee et al.   JOURNAL OF CRYSTAL GROWTH