Growth of single-crystalline GaN layers in a horizontal reactor by chloride epitaxy

Published 2008 View Full Article

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Title
Growth of single-crystalline GaN layers in a horizontal reactor by chloride epitaxy
Authors
Keywords
-
Journal
TECHNICAL PHYSICS
Volume 53, Issue 12, Pages 1602-1605
Publisher
Pleiades Publishing Ltd
Online
2008-12-15
DOI
10.1134/s1063784208120116

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