Photodetection Properties of Nonpolar a‐Plane GaN Grown by Three Approaches Using Plasma‐Assisted Molecular Beam Epitaxy
Published 2019 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Photodetection Properties of Nonpolar a‐Plane GaN Grown by Three Approaches Using Plasma‐Assisted Molecular Beam Epitaxy
Authors
Keywords
-
Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume -, Issue -, Pages 1900171
Publisher
Wiley
Online
2019-06-26
DOI
10.1002/pssa.201900171
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector
- (2019) Arun Malla Chowdhury et al. ACS Applied Materials & Interfaces
- In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN
- (2018) Rohit Pant et al. ACS Applied Materials & Interfaces
- GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity
- (2018) Shubhendra Kumar Jain et al. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- High-performance nonpolar a-plane GaN-based metal–semiconductor–metal UV photo-detectors fabricated on LaAlO3 substrates
- (2018) Wenliang Wang et al. Journal of Materials Chemistry C
- Enhanced UV Photodetector Response of ZnO/Si With AlN Buffer Layer
- (2017) Basanta Roul et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Construction of GaN/Ga2O3 p–n junction for an extremely high responsivity self-powered UV photodetector
- (2017) Peigang Li et al. Journal of Materials Chemistry C
- Effects of sapphire nitridation and growth temperature on the epitaxial growth of hexagonal boron nitride on sapphire
- (2017) Kawser Ahmed et al. Materials Research Express
- Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction
- (2016) Xing Chen et al. ACS Applied Materials & Interfaces
- Recent advances in ultraviolet photodetectors
- (2015) Z. Alaie et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Enhanced UV detection by non-polar epitaxial GaN films
- (2015) Shruti Mukundan et al. AIP Advances
- Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy
- (2014) Shruti Mukundan et al. JOURNAL OF APPLIED PHYSICS
- UV Radiation and the Skin
- (2013) John D'Orazio et al. INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES
- A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures
- (2013) Liwen Sang et al. SENSORS
- Comparative Study of Silicon-Based Ultraviolet Photodetectors
- (2012) Lei Shi et al. IEEE SENSORS JOURNAL
- Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes
- (2011) Basanta Roul et al. JOURNAL OF APPLIED PHYSICS
- Structural and optical properties of nonpolar (11−20) a-plane GaN grown on (1−102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy
- (2011) Mohana K. Rajpalke et al. SCRIPTA MATERIALIA
- Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE
- (2010) Mohana K. Rajpalke et al. JOURNAL OF CRYSTAL GROWTH
- Ultraviolet radiation and Vitamin D3 in amphibian health, behaviour, diet and conservation
- (2009) R.E. Antwis et al. COMPARATIVE BIOCHEMISTRY AND PHYSIOLOGY A-MOLECULAR & INTEGRATIVE PHYSIOLOGY
- Polarization Control of Electron Tunneling into Ferroelectric Surfaces
- (2009) P. Maksymovych et al. SCIENCE
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search