Comparison of the microstructural characterizations of GaN layers grown on Si (111) and on sapphire

Authors

Keywords

GaN on Si, Strain, Transmission electron microscope (TEM), Gallium nitride (GaN), In-GaN/GaN multiple quantum wells (MQWs)

Journal

Volume 63, Issue 8, Pages 1621-1624

Publisher

Korean Physical Society

Online

2013-11-04

DOI

10.3938/jkps.63.1621

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