Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope

Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers

(2020) Md Hasibul Alam et al.   Nature Communications

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors

(2020) Jingli Wang et al.   ADVANCED FUNCTIONAL MATERIALS

Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

(2019) Der-Hsien Lien et al.   SCIENCE

SnSe/MoS 2 van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope

(2019) Jian Guo et al.   ADVANCED MATERIALS

A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics

(2019) Cora M. Went et al.   Science Advances

Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States

(2018) Gwang-Sik Kim et al.   ACS Nano

Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

(2018) Hyung Gon Shin et al.   NANO LETTERS

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

(2018) Yuan Liu et al.   NATURE

Highly efficient and stable MoS2FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coating

(2017) César J. Lockhart de la Rosa et al.   Nanoscale

Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors

(2016) Xuming Zou et al.   ADVANCED MATERIALS

High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

(2016) Jingli Wang et al.   ADVANCED MATERIALS

Two-dimensional semiconductors for transistors

(2016) Manish Chhowalla et al.   Nature Reviews Materials

Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2

(2015) Naveen Kaushik et al.   ACS Applied Materials & Interfaces

Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed

(2015) Hee Sung Lee et al.   ACS Nano

Controlling the Schottky barrier atMoS2/metal contacts by inserting a BN monolayer

(2015) Mojtaba Farmanbar et al.   PHYSICAL REVIEW B

Integration of High-kOxide on MoS2by Using Ozone Pretreatment for High-Performance MoS2Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

(2015) Jingli Wang et al.   Small

Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-$\kappa$ Gate Dielectric

(2014) Chun Hu Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Bandgap, Mid-Gap States, and Gating Effects in MoS2

(2014) Chih-Pin Lu et al.   NANO LETTERS

High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects

(2013) Wenzhong Bao et al.   APPLIED PHYSICS LETTERS

One-Dimensional Electrical Contact to a Two-Dimensional Material

(2013) L. Wang et al.   SCIENCE

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Improved Description of the Structure of Molecular and Layered Crystals: Ab Initio DFT Calculations with van der Waals Corrections

(2010) Tomáš Bučko et al.   JOURNAL OF PHYSICAL CHEMISTRY A