Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2

Published 2015 View Full Article

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Title
Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume 8, Issue 1, Pages 256-263
Publisher
American Chemical Society (ACS)
Online
2015-12-09
DOI
10.1021/acsami.5b08559

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