Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope
出版年份 2021 全文链接
标题
Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope
作者
关键词
-
出版物
Science Advances
Volume 7, Issue 44, Pages -
出版商
American Association for the Advancement of Science (AAAS)
发表日期
2021-10-28
DOI
10.1126/sciadv.abf8744
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
- (2020) Md Hasibul Alam et al. Nature Communications
- Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors
- (2020) Jingli Wang et al. ADVANCED FUNCTIONAL MATERIALS
- Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors
- (2019) Der-Hsien Lien et al. SCIENCE
- SnSe/MoS 2 van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope
- (2019) Jian Guo et al. ADVANCED MATERIALS
- A new metal transfer process for van der Waals contacts to vertical Schottky-junction transition metal dichalcogenide photovoltaics
- (2019) Cora M. Went et al. Science Advances
- Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States
- (2018) Gwang-Sik Kim et al. ACS Nano
- Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact
- (2018) Hyung Gon Shin et al. NANO LETTERS
- Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
- (2018) Yuan Liu et al. NATURE
- Highly efficient and stable MoS2FETs with reversible n-doping using a dehydrated poly(vinyl-alcohol) coating
- (2017) César J. Lockhart de la Rosa et al. Nanoscale
- Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors
- (2016) Xuming Zou et al. ADVANCED MATERIALS
- High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
- (2016) Jingli Wang et al. ADVANCED MATERIALS
- Two-dimensional semiconductors for transistors
- (2016) Manish Chhowalla et al. Nature Reviews Materials
- Interfacial n-Doping Using an Ultrathin TiO2 Layer for Contact Resistance Reduction in MoS2
- (2015) Naveen Kaushik et al. ACS Applied Materials & Interfaces
- Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed
- (2015) Hee Sung Lee et al. ACS Nano
- Controlling the Schottky barrier atMoS2/metal contacts by inserting a BN monolayer
- (2015) Mojtaba Farmanbar et al. PHYSICAL REVIEW B
- Integration of High-kOxide on MoS2by Using Ozone Pretreatment for High-Performance MoS2Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation
- (2015) Jingli Wang et al. Small
- Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-$\kappa$ Gate Dielectric
- (2014) Chun Hu Cheng et al. IEEE ELECTRON DEVICE LETTERS
- Bandgap, Mid-Gap States, and Gating Effects in MoS2
- (2014) Chih-Pin Lu et al. NANO LETTERS
- High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
- (2013) Wenzhong Bao et al. APPLIED PHYSICS LETTERS
- One-Dimensional Electrical Contact to a Two-Dimensional Material
- (2013) L. Wang et al. SCIENCE
- High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
- (2012) Sunkook Kim et al. Nature Communications
- Improved Description of the Structure of Molecular and Layered Crystals: Ab Initio DFT Calculations with van der Waals Corrections
- (2010) Tomáš Bučko et al. JOURNAL OF PHYSICAL CHEMISTRY A
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started