Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness

Photoluminescence of InGaN-based red multiple quantum wells

(2021) Xin Hou et al.   OPTICS EXPRESS

Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures

(2020) Ping Chen et al.   JOURNAL OF ELECTRONIC MATERIALS

Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime

(2020) D. Nag et al.   NANOTECHNOLOGY

Effects of photogenerated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells

(2019) Wei Liu et al.   Materials Research Express

The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells

(2018) Jialin Huang et al.   SUPERLATTICES AND MICROSTRUCTURES

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

(2015) Thi Huong Ngo et al.   APPLIED PHYSICS LETTERS

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

(2015) S. Hammersley et al.   APPLIED PHYSICS LETTERS

Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness

(2015) W. Liu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells

(2015) Wei Liu et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/Al2O3 (0001) LED Heterostructures

(2015) I. S. Romanov et al.   Russian Physics Journal

Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green

(2015) Guo-En Weng et al.   Nanoscale Research Letters

High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate

(2014) Jianli Zhang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells

(2014) Ming-Ming Liang et al.   Chinese Physics B

Erratum: CORRIGENDUM: A novel wavelength-adjusting method in InGaN-based light-emitting diodes

(2014) Zhen Deng et al.   Scientific Reports

OPTICAL PROPERTIES AND CARRIER DYNAMICS IN ASYMMETRIC COUPLED InGaN MULTIPLE QUANTUM WELLS

(2013) GUO-EN WENG et al.   Functional Materials Letters

Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells

(2013) Hu Sun et al.   JOURNAL OF APPLIED PHYSICS

The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

(2010) Xiao-Long Hu et al.   Chinese Physics B

Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

(2008) J. P. Liu et al.   APPLIED PHYSICS LETTERS

Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

(2008) Shi Jong Leem et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY