High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate

Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate

(2013) Junlin Liu et al.   CRYSTENGCOMM

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

(2013) Giovanni Verzellesi et al.   JOURNAL OF APPLIED PHYSICS

Investigation of large Stark shifts in InGaN/GaN multiple quantum wells

(2013) Guibao Xu et al.   JOURNAL OF APPLIED PHYSICS

Efficiency droop in AlGaInP and GaInN light-emitting diodes

(2012) Jong-In Shim et al.   APPLIED PHYSICS LETTERS

III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz

(2012) M Razeghi   IEEE Photonics Journal

Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate

(2011) Junlin Liu et al.   APPLIED PHYSICS LETTERS

Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures

(2011) Lei Liu et al.   JOURNAL OF APPLIED PHYSICS

High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates

(2010) Shuichiro Yamamoto et al.   Applied Physics Express

Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

(2008) Hitoshi Sato et al.   APPLIED PHYSICS LETTERS