Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures

The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells

(2018) Yao Xing et al.   SUPERLATTICES AND MICROSTRUCTURES

Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si

(2018) Meixin Feng et al.   ACS Photonics

Optically pumped vertical-cavity surface-emitting laser at 374.9 nm with an electrically conducting n-type distributed Bragg reflector

(2016) Yuh-Shiuan Liu et al.   Applied Physics Express

Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs

(2016) J. Yang et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition

(2015) Xiao-Hang Li et al.   JOURNAL OF CRYSTAL GROWTH

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

(2015) Hyun Jeong et al.   Scientific Reports

Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth

(2013) Zengcheng Li et al.   APPLIED PHYSICS LETTERS

Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

(2012) D.G. Zhao et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Effect of In incorporation parameters on the electroluminescence of blue–violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

(2012) D.G. Zhao et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Output power enhancement of InGaN/GaN based green light-emitting diodes with high-density ultra-small In-rich quantum dots

(2012) Cheng-Hsueh Lu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz

(2012) M Razeghi   IEEE Photonics Journal

Group III-nitride lasers: a materials perspective

(2011) Matthew T. Hardy et al.   Materials Today

Microstructural origins of localization in InGaN quantum wells

(2010) R A Oliver et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes

(2008) A. Knauer et al.   APPLIED PHYSICS LETTERS

History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes

(2008) Russell D. Dupuis et al.   JOURNAL OF LIGHTWAVE TECHNOLOGY

Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes

(2008) Jianzheng Hu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics