Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells

Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

(2013) Wen-Yu Cao et al.   Chinese Physics B

Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

(2013) Xin Chen et al.   Chinese Physics B

Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells

(2012) Huining Wang et al.   OPTICS EXPRESS

Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes

(2011) Suman De et al.   ADVANCED FUNCTIONAL MATERIALS

The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

(2010) Xiao-Long Hu et al.   Chinese Physics B

Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

(2008) J. P. Liu et al.   APPLIED PHYSICS LETTERS