Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

Published 2008 View Full Article

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Title
Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 23, Issue 12, Pages 125039
Publisher
IOP Publishing
Online
2008-11-22
DOI
10.1088/0268-1242/23/12/125039

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