标题
Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness
作者
关键词
-
出版物
Crystals
Volume 12, Issue 1, Pages 114
出版商
MDPI AG
发表日期
2022-01-17
DOI
10.3390/cryst12010114
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Photoluminescence of InGaN-based red multiple quantum wells
- (2021) Xin Hou et al. OPTICS EXPRESS
- Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures
- (2020) Ping Chen et al. JOURNAL OF ELECTRONIC MATERIALS
- Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime
- (2020) D. Nag et al. NANOTECHNOLOGY
- Effects of photogenerated carriers in GaN layers on the photoluminescence characteristics of violet light-emitting InGaN/GaN multiple quantum wells
- (2019) Wei Liu et al. Materials Research Express
- The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells
- (2018) Jialin Huang et al. SUPERLATTICES AND MICROSTRUCTURES
- Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures
- (2015) Thi Huong Ngo et al. APPLIED PHYSICS LETTERS
- Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
- (2015) S. Hammersley et al. APPLIED PHYSICS LETTERS
- Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness
- (2015) W. Liu et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Effect of localization states on the electroluminescence spectral width of blue–green light emitting InGaN/GaN multiple quantum wells
- (2015) Wei Liu et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/Al2O3 (0001) LED Heterostructures
- (2015) I. S. Romanov et al. Russian Physics Journal
- Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green
- (2015) Guo-En Weng et al. Nanoscale Research Letters
- High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate
- (2014) Jianli Zhang et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells
- (2014) Ming-Ming Liang et al. Chinese Physics B
- Erratum: CORRIGENDUM: A novel wavelength-adjusting method in InGaN-based light-emitting diodes
- (2014) Zhen Deng et al. Scientific Reports
- OPTICAL PROPERTIES AND CARRIER DYNAMICS IN ASYMMETRIC COUPLED InGaN MULTIPLE QUANTUM WELLS
- (2013) GUO-EN WENG et al. Functional Materials Letters
- Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells
- (2013) Hu Sun et al. JOURNAL OF APPLIED PHYSICS
- The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses
- (2010) Xiao-Long Hu et al. Chinese Physics B
- Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes
- (2008) J. P. Liu et al. APPLIED PHYSICS LETTERS
- Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method
- (2008) Shi Jong Leem et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now