Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/Al2O3 (0001) LED Heterostructures

Hopping Transport of Charge Carriers in LEDs Based on Multiple InGaN/GaN Quantum Wells

(2015) I. А. Prudaev et al.   Russian Physics Journal

Low-temperature transport of charge carriers in InGaN/GaN multiple quantum well light-emitting diodes

(2014) Ilya Prudaev et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells

(2013) L. Dong et al.   JOURNAL OF APPLIED PHYSICS

The Influence of Superlattice on the Internal Quantum Efficiency of LED Structures with InGaN / GaN Quantum Wells

(2013) I. S. Romanov et al.   Russian Physics Journal

Temperature Dependence of the Quantum Efficiency of Structures with Multiple Quantum Wells InGaN / GaN Under Photo- and Electroluminescence

(2013) I. A. Prudaev et al.   Russian Physics Journal

Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells

(2013) I. A. Prudaev et al.   SEMICONDUCTORS

Efficiency droop suppression in InGaN-based blue LEDs: Experiment and numerical modelling

(2012) D. A. Zakheim et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE