Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells

Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy

(2012) Akio Kaneta et al.   Applied Physics Express

Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells

(2012) Huining Wang et al.   OPTICS EXPRESS

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

(2011) Yuji Zhao et al.   Applied Physics Express

Power Dependent Micro-Photoluminescence of Green-InGaN/GaN Multiple Quantum Wells

(2011) Sang-Youp Yim et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

(2011) Ž. Gačević et al.   JOURNAL OF APPLIED PHYSICS

Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes

(2011) Dae-Woo Jeon et al.   JOURNAL OF MATERIALS CHEMISTRY

High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes

(2010) You-Da Lin et al.   Applied Physics Express

Effect of localized states on internal quantum efficiency of III-nitride LEDs

(2010) Sergey Yu. Karpov   Physica Status Solidi-Rapid Research Letters

Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots

(2009) J. Renard et al.   APPLIED PHYSICS LETTERS

GaN Substrates for III-Nitride Devices

(2009) Tanya Paskova et al.   PROCEEDINGS OF THE IEEE