A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide
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Title
A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide
Authors
Keywords
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Journal
Materials
Volume 15, Issue 1, Pages 123
Publisher
MDPI AG
Online
2021-12-27
DOI
10.3390/ma15010123
References
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Related references
Note: Only part of the references are listed.- Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication
- (2021) Michael Huff Micromachines
- Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode
- (2020) N. D. Il’inskaya et al. SEMICONDUCTORS
- Single-crystalline SiC integrated onto Si-based substrates via plasma-activated direct bonding
- (2020) Qiushi Kang et al. CERAMICS INTERNATIONAL
- High-temperature etching of SiC in SF6/O2 inductively coupled plasma
- (2020) Artem A. Osipov et al. Scientific Reports
- Accelerated ICP etching of 6H-SiC by femtosecond laser modification
- (2019) Yigang Huang et al. APPLIED SURFACE SCIENCE
- A dry etching method for 4H-SiC via using photoresist mask
- (2019) Rui Liu et al. JOURNAL OF CRYSTAL GROWTH
- Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes
- (2018) Xue-Qian Zhong et al. Chinese Physics B
- Profile Evolution of High Aspect Ratio Silicon Carbide Trenches by Inductive Coupled Plasma Etching
- (2017) Karen M. Dowling et al. JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
- Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al 2 O 3 bilayer mask
- (2017) Jingjie Li et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC
- (2017) Bing-Yue Tsui et al. SOLID-STATE ELECTRONICS
- Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications
- (2017) Ho-Kun Sung et al. Scientific Reports
- Trenched 4H-SiC with tapered sidewall formed by Cl2/O2 reactive ion etching
- (2016) Yuan-Hung Tseng et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Plasma Etching of n-Type 4H-SiC for Photoconductive Semiconductor Switch Applications
- (2015) Huseyin Ekinci et al. JOURNAL OF ELECTRONIC MATERIALS
- Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes
- (2015) H.R. Rossmann et al. MICROELECTRONIC ENGINEERING
- Vertical nanostructure arrays by plasma etching for applications in biology, energy, and electronics
- (2013) B. He et al. Nano Today
- Fabrication of SiC nanopillars by inductively coupled SF6/O2plasma etching
- (2012) J H Choi et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Black SiC formation induced by Si overlayer deposition and subsequent plasma etching
- (2011) Sung-Jae Joo et al. THIN SOLID FILMS
- Self assembled micro masking effect in the fabrication of SiC nanopillars by ICP-RIE dry etching
- (2010) A. Kathalingam et al. APPLIED SURFACE SCIENCE
- Current-Induced Degradation of Nickel Ohmic Contacts to SiC
- (2009) B.P. Downey et al. JOURNAL OF ELECTRONIC MATERIALS
- Investigation of the 4H–SiC surface
- (2008) O.J. Guy et al. APPLIED SURFACE SCIENCE
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