Journal
SOLID-STATE ELECTRONICS
Volume 133, Issue -, Pages 83-87Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2017.05.003
Keywords
Silicon carbide (SiC); Schottky barrier diodes (SBDs); Inductively coupled plasma (ICP) treatment; Fermi-level pinning (FLP) effect
Funding
- Ministry of Education in Taiwan under the ATU Program
Ask authors/readers for more resources
The effect of pre-metal deposition cleaning on 4H-SiC Schottky barrier diodes (SBDs) by using Ar ion bombardment in an inductively coupled plasma (ICP) chamber was investigated. The ICP treatment produced a thin and Si-depleted amorphous layer on the SiC surface. Partial graphitization was observed in the amorphous layer after post-metal deposition (PMD) annealing. This interfacial layer strongly pinned the Schottky barrier height (SBH). PMD annealing at 500 degrees C resulted in a constant SBH (approximately 1.1 eV) and narrow SBH distribution (standard deviation < 3 meV). However, the amorphous layer was consumed after 600 degrees C PMD annealing due to interfacial reactions. These results suggest that the Ar ion bombardment technique with a suitable thermal budget can be used to form relatively uniform SBDs. (C) 2017 Elsevier Ltd. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available