Journal
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 34, Issue 6, Pages -Publisher
A V S AMER INST PHYSICS
DOI: 10.1116/1.4965421
Keywords
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Funding
- Hestia Power, Inc.
- Ministry of Education in Taiwan under the ATU Program
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In this article, trenches with various sidewall slant angles were generated on 4H silicon carbide substrate using Cl-2/O-2-based reactive ion etching. A series of experiments was conducted to investigate the effects of chamber environmental conditions, including Cl-2/O-2 mixing ratios, radio frequency power, and process pressure. The results indicate that the chamber pressure, ion energy, redeposition of etch products/byproducts, and even the existence of photoresist are critical factors affecting the slant angle. The introduction of oxygen not only changes the etch profile but may also cause a serious problem known as the micromasking effect. A method combining photoresist and hydrofluoric acid clean was proposed to eliminate the micromasking effect while keeping the sidewall passivation. (C) 2016 American Vacuum Society.
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