Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode

Methods of micro-profiling of 4H-SiC are described: formation of mesa structures with inclined walls (off-vertical wall inclination angle exceeding 45 degrees) by reactive ion etching; etching of mesa structures with a flat bottom and inclined walls (off-vertical wall inclination angle being smaller than 45 degrees) by ion-beam and reactive ion plasma etching. The application of etching methods in the fabrication technology of 4H-SiC-based mesa-epitaxial field-effect transistors with a Schottky gate is demonstrated.