Article
Engineering, Electrical & Electronic
Artem A. Osipov, Armenak A. Osipov, Gleb A. Iankevich, Anastasiya B. Speshilova, Alexander Shakhmin, Vladimir I. Berezenko, Sergey E. Alexandrov
Summary: This extensive study investigated the plasma chemical etching process of single-crystalline lithium niobate in SF6/O-2 based inductively coupled plasma. The research revealed that the temperature of the substrate holder significantly affects the etching rate. X-ray photoelectron spectroscopy technique identified the formation of nonvolatile LiF compound on the surface during the etching process. An optimal process for deep etching of LiNbO3 was developed based on the obtained results.
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
(2021)
Article
Chemistry, Physical
Dain Sung, Long Wen, Hyunwoo Tak, Hyejoo Lee, Dongwoo Kim, Geunyoung Yeom
Summary: The etching properties of C6F6/Ar/O-2 in ICP and CCP systems were evaluated. In the ICP system, lower O-2/C6F6 ratio and higher SiO2 etch rate were required, while in the CCP system, tapered SiO2 etch profiles were observed.
Article
Nanoscience & Nanotechnology
Fabian Kaufmann, Giovanni Finco, Andreas Maeder, Rachel Grange
Summary: Lithium niobate on insulator is becoming a versatile platform for new photonic integrated devices. Progress has been made to improve the fabrication of optical circuits on a large scale, and the performance has reached remarkable levels. However, the argon etching process is still challenging to optimize due to micro-masking effects and low etch mask selectivity. A workflow is presented to identify the best etching results, and three methods are proposed to achieve redeposition-free lithium niobate etching with good sidewall quality without the need for wet chemistry.
Article
Chemistry, Multidisciplinary
Ye-Bin You, Young-Seok Lee, Si-Jun Kim, Chul-Hee Cho, In-Ho Seong, Won-Nyoung Jeong, Min-Su Choi, Shin-Jae You
Summary: This research reveals that the concentration of oxygen radicals measured by OES does not exactly match the ashing rate in the oxygen plasma ashing process. Considering plasma parameters, such as electron density, can solve this issue.
Article
Engineering, Chemical
Banat Gul, Almas Gul, Aman-ur Rehman, Iftikhar Ahmad
Summary: The research investigated SF6/O-2 plasma discharge using a self-consistent fluid model to calculate the densities of dominant plasma species and study the impact of O-2 concentration on plasma characteristics. The results showed a bell shape distribution for neutral species and a uniform distribution for charged species at the center of the discharge.
PLASMA CHEMISTRY AND PLASMA PROCESSING
(2021)
Review
Chemistry, Physical
Katarzyna Racka-Szmidt, Bartlomiej Stonio, Jaroslaw Zelazko, Maciej Filipiak, Mariusz Sochacki
Summary: This paper provides a review of the inductively coupled plasma reactive ion etching (ICP-RIE) method for silicon carbide etching. The experimental results show that the addition of O-2 and changes in RIE and ICP power have an impact on the etching rate of the Cr mask and the selectivity of SiC/Cr etching. SiC, with its attractive properties, holds great potential benefits for advances in submicron semiconductor processing technology.
Article
Optics
Jinhai Sun, Yan Zheng, Jielin Shi, Yarui Zhao, Yu Li, Ding Wu, He Cai, Xutao Zhang, Xianli Zhu, Yongqiang Liu, Xinxue Sun, Zengming Chao, Hongcheng Yin, Wenqi Lu, Hongbin Ding
Summary: The electron density distribution of inductively coupled plasma (ICP) was measured using laser Thomson scattering (TS) method and simulated using finite element method (FEM). The accuracy of the ICP generation simulation model was verified by comparing the simulated and experimental results. The propagation characteristics of terahertz wave in ICP were measured using terahertz time domain spectroscopy (THz-TDS) and calculated using FEM, showing high consistency between experimental and simulation results. This further proves the accuracy of the terahertz wave transmission model in plasma and the feasibility of joint simulation with ICP generation simulation model.
Article
Materials Science, Multidisciplinary
Jiabao Sun, Zhengyang Chen, Shiqi Zhou, Yijun Sun, Zhi Liu, Changhong Chen, Yanhua Liu, Ying Sun, Meifang Wang, Shijian Xie, Wucan Liu, Qun Zeng, Haifeng Wu, Zhanqi Bai
Summary: This study systematically investigates the plasma etching of silicon nitride (SiNx) films and underlying silicon (Si) using a CHF3/O2 mixture. The effects of various parameters on the etching rate, sidewall profile, surface roughness, and etching selectivity are studied. It is found that the concentration of O2 plays a crucial role in determining the etching mechanisms and achieving desirable etching characteristics.
Article
Engineering, Electrical & Electronic
Yanming Xia, Zetian Wang, Lu Song, Wei Wang, Jing Chen, Shenglin Ma
Summary: Tungsten is a promising material for MEMS applications, but it is challenging to fabricate microstructures with high aspect ratios and small feature sizes due to its excellent properties. In this study, an inductively coupled plasma (ICP) deep etching process was developed for bulk tungsten, and successfully achieved microstructures with high aspect ratios and small feature sizes, demonstrating its potential application prospect.
SENSORS AND ACTUATORS A-PHYSICAL
(2022)
Article
Chemistry, Physical
Inho Seong, Si-jun Kim, Youngseok Lee, Chulhee Cho, Wonnyoung Jeong, Yebin You, Minsu Choi, Byeongyeop Choi, Shinjae You
Summary: Investigating the quenching of electron temperature in plasma processing is crucial for controlling electron temperature and improving the efficiency of plasma material processing.
Article
Materials Science, Multidisciplinary
Dalius Jucius, Viktoras Grigaliunas, Mindaugas Juodenas, Asta Guobiene, Algirdas Lazauskas
Summary: This paper introduces the use of inductively coupled plasma reactive ion etching (ICP-RIE) to make the glass surface superhydrophilic and antifogging. The results show that both maskless ICP-RIE and ICP-RIE with lithographic masks can improve the optical transmittance of the glass. However, the maskless etching did not achieve superhydrophilic state, while the lithographic masks resulted in textured surfaces suitable for superhydrophilicity and ensured high transmittance.
Article
Engineering, Electrical & Electronic
Guangyang Lin, Peng Cui, Tao Wang, Ryan Hickey, Jie Zhang, Haochen Zhao, James Kolodzey, Yuping Zeng
Summary: The research successfully optimized the anisotropic etching of GeSn microstructures and selective etching of Ge on GeSn by adjusting process parameters, laying the foundation for fabricating various microstructures.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2021)
Article
Engineering, Manufacturing
Jeong Eun Choi, Hyoeun Park, Yongho Lee, Sang Jeen Hong
Summary: In this study, virtual metrology (VM) for etch profile and depth in deep silicon trench etching with SF6/O-2/Ar plasma was practiced using machine learning techniques. Classification and prediction models were built based on recipe and optical emission spectroscopy (OES) data, and it was found that the augmented VM model showed improved accuracy in predicting etch profile.
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
(2022)
Article
Engineering, Electrical & Electronic
Vy Thi Hoang Nguyen, Flemming Jensen, Joerg Hubner, Evgeniy Shkondin, Roy Cork, Kechun Ma, Pele Leussink, Wim De Malsche, Henri Jansen
Summary: The research demonstrates that directional etching of chromium using fluorine-oxygen-based plasma is feasible, providing high etch rates while maintaining reasonable directionality. The fluorine-oxygen-based plasma can achieve high etch rates for chromium oxide, and using a sequential fluorine-oxygen-based plasma etching process can improve selectivity while preserving directionality.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
(2021)
Article
Engineering, Manufacturing
Yi Zhang, Linfeng Zhang, Keyu Chen, Dianzi Liu, Dong Lu, Hui Deng
Summary: This method proposes a rapid detection of subsurface damage (SSD) of SiC using atmospheric inductivity coupled plasma, optimizing detection through plasma diagnosis and simulation and confirming accuracy with STEM analysis. Rapid screening ability for SSD is demonstrated, making it a promising approach for rapid detection.
INTERNATIONAL JOURNAL OF EXTREME MANUFACTURING
(2021)
Article
Materials Science, Paper & Wood
E. Endiiarova, A. A. Osipov, S. E. Alexandrov
Summary: This paper describes the wet chemistry method used to hydrophobize the surface of coarse calico. The hydrophobicity of the surface was achieved by the formation of aluminum oxide. A Taguchi experimental plan was used to investigate the effects of soap solution temperature, aluminum chloride solution concentration, sample treatment time in the aluminum chloride solution, and heat treatment temperature on water absorption, contact angle, capillary absorption, and calico moisture content. The results showed that capillary absorption and water absorption increased with increasing concentration of aluminum chloride solution, while a longer processing time in the aluminum chloride solution resulted in decreased hydrophobicity of the samples. The dependencies of hygroscopic properties on heat treatment temperature and soap solution temperature were found to be similar.
Article
Physics, Applied
Emilie Jue, Gleb Iankevich, Thomas Reisinger, Horst Hahn, Virgil Provenzano, Matthew R. Pufall, Ian W. Haygood, William H. Rippard, Michael L. Schneider
Summary: This study measured the synaptic properties of a magnetic Josephson junction (MJJ) consisting of size-selected Fe nanoclusters in an amorphous Ge barrier between two Nb electrodes. The critical current of the device was found to vary with the magnetic order of the clusters and could be tuned using short electrical pulses. This result is significant as it eliminates the need for postdeposition annealing in synaptic MJJs for neuromorphic applications and opens up possibilities for material optimization and better understanding of the device physics.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Engineering, Manufacturing
Artem A. Osipov, Gleb A. Iankevich, Armenak A. Osipov, Anastasiya B. Speshilova, Anna A. Karakchieva, Ekaterina Endiiarova, Svetlana N. Levina, Sergey Karakchiev, Sergey E. Alexandrov
Summary: This study presents the results of an in-depth investigation into the plasma-chemical etching process of single-crystal silicon carbide in SF6/O-2 ICP, examining the influence of different parameters and utilizing OES technique for optimization. Computational simulation was used to study the impact of microtrenches on the diaphragm, showing a significant effect on the mechanical characteristics.
JOURNAL OF MANUFACTURING PROCESSES
(2022)
Article
Engineering, Electrical & Electronic
Artem Osipov, Sergey Alexandrov, Vladimir Berezenko, Anastasiya Speshilova, Vorobyev Alexandr, Armenak Osipov
Summary: The study investigated the emission spectra of NF3/Ar plasmas formed during plasma chemical etching, emphasizing the importance of wavelength region for LiNbO3 etching control. The influence of different process conditions on the spectral lines of NF3/Ar plasmas was studied.
SENSORS AND ACTUATORS A-PHYSICAL
(2022)
Article
Multidisciplinary Sciences
Artem A. Osipov, Gleb A. Iankevich, Anastasia B. Speshilova, Alina E. Gagaeva, Armenak A. Osipov, Yakov B. Enns, Alexey N. Kazakin, Ekaterina Endiiarova, Ilya A. Belyanov, Viktor I. Ivanov, Sergey E. Alexandrov
Summary: In this work, the high efficiency of optical emission spectroscopy in estimating the etching profile of silicon structures in SF6/C4F8/O-2 plasma is demonstrated. The optimal intensity ratios for different structure sizes and aspect ratios were investigated, and the influence of process parameters on various etching characteristics was also studied.
SCIENTIFIC REPORTS
(2022)
Article
Engineering, Chemical
Anastasia S. Bil, Sergey E. Alexandrov
Summary: This paper reports on a study of an atmospheric pressure plasma enhanced chemical vapor deposition process using a simple dielectric barrier discharge and a low frequency high voltage generator. The authors investigated the effect of deposition parameters on the properties of silica-like layers grown from a TEOS/He/O-2 system. The results show that deposition temperature and electrical power absorbed in plasma are critical parameters in determining the characteristics of the deposited films. The study provides insights into achieving high growth rates of high quality films.
PLASMA CHEMISTRY AND PLASMA PROCESSING
(2022)
Article
Chemistry, Multidisciplinary
Abhishek Sarkar, Di Wang, Mohana Kante, Luis Eiselt, Vanessa Trouillet, Gleb Iankevich, Zhibo Zhao, Subramshu S. Bhattacharya, Horst Hahn, Robert Kruk
Summary: Technologically relevant strongly correlated phenomena exhibited by perovskite manganites are enhanced by the coexistence of multiple competing magneto-electronic phases. The recently discovered high entropy oxides exhibit indications of an inherent magneto-electronic phase separation encapsulated in a single crystallographic phase. Combining the high entropy concept with standard property control, the study demonstrates the potential for a synergetic development of strongly correlated oxides offered by the high entropy design approach.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Gleb Iankevich, Abhishek Sarkar, Shyam Katnagallu, Mohammed Reda Chellali, Di Wang, Leonardo Velasco, Ruby Singh, Thomas Reisinger, Robert Kruk, Horst Hahn
Summary: Nanocomposite materials, with the ability to tailor their structural properties and functionalities, play a unique role in materials science. This study demonstrates the possibility of achieving nanocomposites from a bimetallic system, which overcomes the limitations of thermodynamic stability conditions. By co-depositing 2000-atom Ni-clusters and Cu-atoms, nanocomposite samples with different compositions are synthesized. The retention of the metastable nanostructure is confirmed through various characterization techniques. The magnetic properties of the nanocomposites can be tailored by controlling the Ni concentration, offering a promising direction for future research on nanocomposites consisting of fully miscible elements.
ADVANCED MATERIALS
(2023)
Article
Materials Science, Coatings & Films
Artem Osipov, Alina Gagaeva, Anastasia Speshilova, Armenak Osipov, Yakov Enns, Alexey Kazakin, Ekaterina Endiiarova, Roman Kornilov, Sergey Alexandrov
Summary: In this work, the influence of various technological parameters on plasma chemical etching of silicon was investigated. It was found that the silicon etching rate, etching selectivity, and sidewall angle of etched structures are all affected by the percentage of SF6, pressure, total flow rate, high-frequency power, and bias voltage. The study also revealed a correlation between the sidewall angle and the optical emission spectra. A method of in situ diagnostics using the emission intensities of specific lines was proposed to control the sidewall angle. The experiments were conducted on windows with different linear dimensions.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2023)
Article
Engineering, Chemical
Anastasia S. Bil, Sergey E. Alexandrov
Summary: This paper reports on a study of anti-scratch silica-like coatings deposited on polycarbonate using an atmospheric pressure dielectric barrier discharge. Plasma pretreatment in pure helium is found to significantly increase the PC surface energy and improve adhesion of the films. However, the introduction of oxygen did not show significant improvement in the coatings' properties.
PLASMA CHEMISTRY AND PLASMA PROCESSING
(2023)
