A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State

Published 2015 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 62, Issue 8, Pages 2606-2613
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2015-06-16
DOI
10.1109/ted.2015.2439812

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.