Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

Collective Motion of Conducting Filaments in Pt/n-Type TiO2/p-Type NiO/Pt Stacked Resistance Switching Memory

(2011) Kyung Min Kim et al.   ADVANCED FUNCTIONAL MATERIALS

Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

(2011) Tuo-Hung Hou et al.   APPLIED PHYSICS LETTERS

Investigation of HfO2 high-k dielectrics electronic structure on SiO2/Si substrate by x-ray photoelectron spectroscopy

(2011) T. L. Duan et al.   APPLIED PHYSICS LETTERS

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Multibit Operation of $\hbox{TiO}_{x}$ -Based ReRAM by Schottky Barrier Height Engineering

(2011) Jubong Park et al.   IEEE ELECTRON DEVICE LETTERS

Resistive switching characteristics of ultra-thin TiOx

(2011) Jubong Park et al.   MICROELECTRONIC ENGINEERING

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3

(2011) Blanka Magyari-Köpe et al.   NANOTECHNOLOGY

Formulas of 1/f noise in Schottky barrier diodes under reverse bias

(2011) Chan Hyeong Park et al.   SOLID-STATE ELECTRONICS

Conduction and Low-Frequency Noise Analysis in $ \hbox{Al}/\alpha\hbox{-TiO}_{X}/\hbox{Al}$ Bipolar Switching Resistance Random Access Memory Devices

(2010) Jung-Kyu Lee et al.   IEEE ELECTRON DEVICE LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Electrical evidence of unstable anodic interface in Ru∕HfOx∕TiN unipolar resistive memory

(2008) Heng Yuan Lee et al.   APPLIED PHYSICS LETTERS

Interfacial structure and electrical properties of ultrathin HfO2dielectric films on Si substrates by surface sol–gel method

(2008) You-Pin Gong et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS